Y. Roh

Hf-silicate inter-poly dielectric technology for sub 70nm body tied FinFET flash memory

We report for the first time on 256Mb NOR-type body tied FinFET flash memory using Hf silicate IPD (inter poly dielectric) and compare with FinFET flash memory using traditional ONO IPD. An enlarged coupling ratio through Hf silicate IPD enhanced a CHEI (channel hot electron injection) programming speed and made the operation voltage down. And we could obtain a higher erasing speed resulted from HHI (hot hole injection) erase than that of F-N tunneling without degrading endurance characteristics.

DC and RF characteristics of HfO 2 in metal-inaulator-metal capacitor

We have investigated the DC and RF characteristics of Si/SiO₂(~4mum)/Ti/Pt-HfO₂-Al metal-insulator-metal (MIM) devices. We demonstrate in this work that the MIM capacitors with high-k: HfO₂ films result in the better DC and RF properties than those obtained using either SiO₂ or Si₃N₄. Both high capacitance density and small frequency-dependent capacitance reduction were observed in the MIM capacitors in which HfO₂ was employed for an insulator.

Improved performance of multi-giga bit NAND flash using channel orientation

In this paper, we report the enhanced performance of multi-giga bit NAND flash memory through the combined effects of uniaxial compressive stress and <100>-oriented channel engineering. Using this method, cell current increased more than 29% owing to the mobility enhancement of the narrow width (60 nm) flash cell. Reduced interface trap with the active edge of <100> channel resulted in the endurance characteristic improvement ~5%.