Yabo Gao

Toward single-layer uniform hexagonal boron nitride-graphene patchworks with zigzag linking edges.

The atomic layer of hybridized hexagonal boron nitride (h-BN) and graphene has attracted a great deal of attention after the pioneering work of P. M. Ajayan et al. on Cu foils because of their unusual electronic properties (Ci, L. J.; et al. Nat. Mater. 2010, 9, 430-435). However, many fundamental issues are still not clear, including the in-plane atomic continuity as well as the edge type at the boundary of hybridized h-BN and graphene domains. To clarify these issues, we have successfully grown a perfect single-layer h-BN-graphene (BNC) patchwork on a selected Rh(111) substrate, via a two-step patching growth approach. With the ideal sample, we convinced that at the in-plane linking interface, graphene and h-BN can be linked perfectly at an atomic scale. More importantly, we found that zigzag linking edges were preferably formed, as demonstrated by atomic-scale scanning tunneling microscopy images, which was also theoretically verified using density functional theory calculations. We believe the experimental and theoretical works are of particular importance to obtain a fundamental understanding of the BNC hybrid and to establish a deliberate structural control targeting high-performance electronic and spintronic devices.

Quasi-Freestanding Monolayer Heterostructure of Graphene and Hexagonal Boron Nitride on Ir(111) with a Zigzag Boundary

In-plane heterostructure of hexagonal boron nitride and graphene (h-BN-G) has become a focus of graphene research owing to its tunable bandgap and intriguing properties. We report herein the synthesis of a quasi-freestanding h-BN-G monolayer heterostructure on a weakly coupled Ir(111) substrate, where graphene and h-BN possess distinctly different heights and surface corrugations. An atomically sharp zigzag type boundary has been found to dominate the patching interface between graphene and h-BN, as evidenced by high-resolution Scanning tunneling microscopy investigation as well as density functional theory calculation. Scanning tunneling spectroscopy studies indicate that the graphene and h-BN tend to exhibit their own intrinsic electronic features near the patching boundary. The present work offers a deep insight into the h-BN-graphene boundary structures both geometrically and electronically together with the effect of adlayer-substrate coupling.

Growth and Atomic-Scale Characterizations of Graphene on Multifaceted Textured Pt Foils Prepared by Chemical Vapor Deposition

The synthesis of centimeter-scale uniform graphene on Pt foils was accomplished via a traditional ambient pressure chemical vapor deposition (CVD) method. Using scanning electron microscopy (SEM) and Raman spectroscopy, we reveal the macroscopic continuity, the thickness, as well as the defect state of as-grown graphene. Of particular importance is that the Pt foils after CVD growth have multifaceted texture, which allows us to explore the substrate crystallography effect on the growth rate and the continuity of graphene. By virtue of atomically resolved scanning tunneling microscopy (STM), we conclude that graphene grows mainly in registry with the symmetries of Pt(111), Pt(110), and Pt(100) facets, leading to hexagonal lattices and striped superstructures. Nevertheless, the carbon lattices on interweaving facets with different identities are connected seamlessly, which ensure the graphene growth from nanometer to micrometer levels. With these results, another prototype for clarifying the preliminary growth mechanism of the CVD process is demonstrated as an analogue of graphene on Cu foils.

Grain Boundary Structures and Electronic Properties of Hexagonal Boron Nitride on Cu(111)

Grain boundaries (GBs) of hexagonal boron nitride (h-BN) grown on Cu(111) were investigated by scanning tunneling microscopy/spectroscopy (STM/STS). The first experimental evidence of the GBs composed of square-octagon pairs (4|8 GBs) was given, together with those containing pentagon-heptagon pairs (5|7 GBs). Two types of GBs were found to exhibit significantly different electronic properties, where the band gap of the 5|7 GB was dramatically decreased as compared with that of the 4|8 GB, consistent with our obtained result from density functional theory (DFT) calculations. Moreover, the present work may provide a possibility of tuning the inert electronic property of h-BN via grain boundary engineering.

Different growth behaviors of ambient pressure chemical vapor deposition graphene on Ni(111) and Ni films: A scanning tunneling microscopy study

AbstractGraphene growth on the same metal substrate with different crystal morphologies, such as single crystalline and polycrystalline, may involve different mechanisms. We deal with this issue by preparing graphene on single crystal Ni(111) and on ∼300 nm thick Ni films on SiO2 using an ambient pressure chemical vapor deposition (APCVD) method, and analyze the different growth behaviors for different growth parameters by atomically-resolved scanning tunneling microscopy (STM) and complementary macroscopic analysis methods. Interestingly, we obtained monolayer graphene on Ni(111), and multilayer graphene on Ni films under the same growth conditions. Based on the experimental results, it is proposed that the graphene growth on Ni(111) is strongly templated by the Ni(111) lattice due to the strong Ni-C interactions, leading to monolayer graphene growth. Multilayer graphene flakes formed on polycrystalline Ni films are usually stacked with deviations from the Bernal stacking type and show small rotations among the carbon layers. Considering the different substrate features, the inevitable grain boundaries on polycrystalline Ni films are considered to serve as the growth fronts for bilayer and even multilayer graphene.

Thinning segregated graphene layers on high carbon solubility substrates of rhodium foils by tuning the quenching process.

We report the synthesis of large-scale uniform graphene films on high carbon solubility substrates of Rh foils for the first time using an ambient-pressure chemical vapor deposition method. We find that, by increasing the cooling rate in the growth process, the thickness of graphene can be tuned from multilayer to monolayer, resulting from the different segregation amount of carbon atoms from bulk to surface. The growth feature was characterized with scanning electron microscopy, Raman spectra, transmission electron microscopy, and scanning tunneling microscopy. We also find that bilayer or few-layer graphene prefers to stack deviating from the Bernal stacking geometry, with the formation of versatile moiré patterns. On the basis of these results, we put forward a segregation growth mechanism for graphene growth on Rh foils. Of particular importance, we propose that this randomly stacked few-layer graphene can be a model system for exploring some fantastic physical properties such as van Hove singularities.

Clinicopathological study of distant metastases of salivary adenoid cystic carcinoma.

Most studies of the clinicopathological characteristics and prognosis of patients with distant metastasis of salivary adenoid cystic carcinoma (SACC) have used small patient samples. To further explore this issue, a descriptive and prognostic study of 467 patients with SACC who were treated from 1963 to 2009 was conducted at a single institution. One hundred and forty-five patients (31.0%) had distant metastases. At least 20% of patients who presented with the early-stage disease and no recurrence developed distant metastasis. The overall 5-, 10-, and 20-year survival rates were 85.6%, 67.4%, and 50.4%, respectively, for patients without distant metastasis, and 69.1%, 45.7%, and 14.3%, respectively, for patients with distant metastasis. The median survival time after distant metastasis was 36 months (range 1-112 months). The prognosis was similar between patients who received treatment for metastasis and those who did not. Patients who were diagnosed with early-stage disease and without local recurrence of the primary tumours could also develop distant metastases. The biological characteristics of adenoid cystic carcinoma were different from those of squamous cell carcinoma. At present, the effectiveness of treatment for distant metastases is not ideal and further research is needed.

A clinicopathologic study on basaloid squamous cell carcinoma in the oral and maxillofacial region

Basaloid squamous cell carcinoma (BSCC) is a rare distinct variant of squamous cell carcinoma (SCC). To investigate its clinical behavior and prognosis, 15 patients with BSCC in the oral and maxillofacial region were clinically analyzed and compared with 15 patients with conventional SCC matched for site, stage, gender and age. To understand its immunohistochemical features, sections for cytokeratin AE1/AE3, CK 13. CK 7, CK 8, proliferating cell nuclear antigen (PCNA) and p53 were reviewed from 12 patients with BSCC. The rate of cervical lymph node metastasis of BSCC was as high as 67% and that of distant metastasis 13%. The tumor recurrence rate was 33% and the 3-year and 5-year survival rates were 53% and 32%, respectively. For conventional SCC, the cervical lymph node metastasis rate was 27%, that of distant metastasis 7%, tumor recurrence rate was 33%, and 3-year and 5-year survival rates were 80% and 70%, respectively. In most BSCC patients (10/12) the PCNA index was over 50%. Twelve BSCC patients were diagnosed with grade II or III conventional SCC when the original records of the primary diagnosis for the 15 patients with BSCC were reviewed. The biological behavior and prognosis of BSCC are similar to those of poorly differentiated SCC.

Atomic-Scale Morphology and Electronic Structure of Manganese Atomic Layers Underneath Epitaxial Graphene on SiC(0001)

We report the fabrication of a novel epitaxial graphene(EG)/Mn/SiC(0001) sandwiched structure through the intercalation of as-deposited Mn atoms on graphene surfaces, with the aid of scanning tunneling microscope, low energy electron diffraction, and X-ray photoelectron spectroscopy. We found that Mn can intercalate below both sp(3)-hybridized carbon-rich interface layer and monolayer graphene, along with the formation of various embedded Mn islands showing different surface morphologies. The unique trait of the sandwiched system is that the strong interaction between the carbon-rich interface layer and SiC(0001) can be decoupled to some degrees, and contemporaneous, an n-doping effect is observed by mapping the energy band of the system using angle-resolved photoemission spectroscopy. Moreover, what deserves our special attention is that the intercalated islands can only evolve below monolayer graphene when a bilayer coexists, accounting for an intriguing graphene thickness-dependent intercalation effect. In the long run, we believe that the construction of graphene/Mn/SiC(0001) systems offers ideal candidates for exploring some intriguing physical properties such as the magnetic property of two-dimensional transition metal systems.

Single and Polycrystalline Graphene on Rh(111) Following Different Growth Mechanisms

Graphene grown on the same substrate but under different growth conditions may evolve diverse characteristics and disparate growth mechanisms. To explore this issue, graphene is prepared on Rh(111) by both ultrahigh vacuum and ambient-pressure chemical vapor deposition methods and the different growth behaviors, the atomic-scale structures, and the stacking geometry are analysed, mainly by virtue of scanning tunneling microscope. Interestingly, with ultrahigh vacuum chemical vapor deposition growth at 600 °C, a template growth of graphene by the Rh(111) lattice is obtained, reflected with the formation of a uniform graphene moiré. In comparison, with the ambient-pressure chemical vapor deposition at 1000 °C by different quenching processes, monolayer and randomly stacked few-layer polycrystalline graphene is achieved, probably directed by combined surface catalysis and segregation mechanisms. In this case, strong and weak interactions between graphene and Rh substrates are suggested, with the samples prepared under vacuum and ambient-pressure conditions, respectively. This work is expected to contribute greatly to the exploration of interactions between graphene and a substrate, as well as the segregation mechanism of graphene growth on polycrystalline transitional metal substrates.