Yang-Ho Bae

Effects of a Ni alloying element on Al?Ni metallization

The effect of the Ni content (2?18 at.% Ni) in Al thin films on their resistivity, hillock formation and Al3Ni compound formation was investigated. The as-deposited Al?Ni-alloy films showed high elastic strains which increased with increasing Ni content. In addition, the annealing of the supersaturated Al?Ni-alloy thin films yielded two phases: Al3Ni and Al with strong (2?2?0) and (1?1?1) textures, respectively, suggesting that the nucleation of (2?2?0) Al3Ni is closely associated with (1?1?1) Al. The resistivity of the as-annealed Al?Ni-alloy films varied as functions of the volume fraction and grain size of the two phases, which were determined by the Ni content and annealing temperature, respectively. The hillock formation was effectively suppressed when a small amount of Ni was added to the Al alloy. The results showed that a Ni content of less than approximately 4.5 at.% produced hillock-free Al-alloy thin films with a low resistivity of less than 6.0 ?? cm upon annealing at 350 ?C.

P-10: Mechanism of Lowering Contact Resistance between Transparent Conducting Oxide Layer and Mo/Al/Mo Layer in TFT-LCDs

It was found that the mechanism of lowering contact resistance between TCO and Mo/Al/Mo layer is the side ring contact between TCO and top Mo of Mo/Al/Mo. This is contrary to the previous results that used MoxAly interfacial layer to explain the low contact resistance of TCO and Mo/Al/Mo layer.