Yanxue Chen

Broadband Few‐Layer MoS2 Saturable Absorbers

The bandgaps of monolayer and bulk molybdenum sulfide (MoS2 ) result in that they are far from suitable for application as a saturable absorption device. In this paper, the operation of a broadband MoS2 saturable absorber is demonstrated by the introduction of suitable defects. It is believed that the results provide some inspiration in the investigation of two-dimensional optoelectronic materials.

Annealing effect on photovoltaic performance of CdSe quantum-dots-sensitized TiO 2 nanorod solar cells

Large area rutile TiO2 nanorod arrays were grown on F:SnO2 (FTO) conductive glass using a hydrothermal method at low temperature. CdSe quantum dots (QDs) were deposited onto single-crystalline TiO2 nanorod arrays by a chemical bath deposition (CBD) method to make a photoelectrode. The solar cell was assembled using a CdSe-TiO2 nanostructure as the photoanode and polysulfide solution as the electrolyte. The annealing effect on optical and photovoltaic properties of CdSe quantum-dotssensitized TiO2 nanorod solar cells was studied systematically. A significant change of the morphology and a regular red shift of band gap of CdSe nanoparticles were observed after annealing treatment. At the same time, an improved photovoltaic performance was obtained for quantum-dots-sensitized solar cell using the annealed CdSe-TiO2 nanostructure electrode. The power conversion efficiency improved from 0.59% to 1.45% as a consequence of the annealing effect. This improvement can be explained by considering the changes in the morphology, the crystalline quality, and the optical properties caused by annealing treatment.

A self-powered UV photodetector based on TiO2 nanorod arrays

Large-area vertical rutile TiO2 nanorod arrays (TNAs) were grown on F/SnO2 conductive glass using a hydrothermal method at low temperature. A self-powered ultraviolet (UV) photodetector based on TiO2 nanorod/water solid–liquid heterojunction is designed and fabricated. These nanorods offer an enlarged TiO2/water contact area and a direct pathway for electron transport simultaneously. By connecting this UV photodetector to an ammeter, the intensity of UV light can be quantified using the output short-circuit photocurrent without a power source. A photosensitivity of 0.025 A/W and a quick response time were observed. At the same time, a high photosensitivity in a wide range of wavelength was also demonstrated. This TNA/water UV detector can be a particularly suitable candidate for practical applications for its high photosensitivity, fast response, excellent spectral selectivity, uncomplicated low-cost fabrication process, and environment-friendly feature.

Ferromagnetism and magnetoresistance of Co–ZnO inhomogeneous magnetic semiconductors

Co–ZnO inhomogeneous magnetic semiconductor thin films were synthesized on the subnanometer scale by sputtering. Room temperature ferromagnetism with high magnetization was found. Large negative magnetoresistance of 11% was found at room temperature, and its value increased with a decrease in temperature up to 36% at 4.8 K. The mechanism for large negative magnetoresistance is discussed.

High TC ferromagnetism of Zn(1−x)CoxO diluted magnetic semiconductors grown by oxygen plasma-assisted molecular beam epitaxy

Co-doped wurtzite ZnO [Zn(1−x)CoxO] thin films have been grown on Al2O3(0001) substrates by using oxygen plasma-assisted molecular beam epitaxy at the low growth temperature of 450°C. The epitaxial films of Co concentration at 0⩽x⩽0.12 are single crystalline, which were examined by reflection high energy electron diffraction and x-ray diffraction. Both of optical transmission spectrum and in situ. x-ray photoelectron spectroscopy studies confirmed the incorporation of Co2+ cations into wurtzite ZnO lattice. Magnetic measurements revealed that the Zn(1−x)CoxO thin films are ferromagnetic with Curie temperature TC above room temperature, and the ferromagnetism shows intrinsic characteristic.

High-performance self-powered UV photodetectors based on TiO2 nano-branched arrays

Nano-branched TiO2 arrays were fabricated on fluorine-doped tin oxide (FTO) glass by a facile two-step chemical synthesis process. Self-powered UV photodetectors based on photoelectrochemical cells (PECs) were assembled using these TiO2 nano-branched arrays as photoanodes. These visible-blind self-powered UV photodetectors exhibit high sensitivity and high-speed photoresponse. Compared with photodetectors based on bare TiO2 nanorod arrays, TiO2 nano-branched arrays show drastically improved photodetecting performance as photoanodes. The photosensitivity increases from 0.03 to 0.22 A W(-1) when optimized nano-branched TiO2 arrays are used, corresponding to an incident photon-to-current conversion efficiency higher than 77%. The UV photodetectors also exhibit excellent spectral selectivity and fast response (0.05 s decay time). The improved performance is attributed to a markedly enlarged TiO2/electrolyte contact area and good electron conductivity in the one-dimensional, well-aligned TiO2 nanorod trunk.

High temperature ferromagnetism and perpendicular magnetic anisotropy in Fe-doped In2O3 films

High temperature ferromagnetism and perpendicular magnetic anisotropy were observed in Fe-doped In2O3 magnetic semiconductor films deposited on R-cut sapphire by pulse laser deposition. The films show a Curie temperature as high as 927K. Strong perpendicular magnetic anisotropy with a remnant magnetization ratio of 0.77 and a coercivity of 680Oe is demonstrated. Extensive microstructure, composition, and magnetic studies indicate that Fe element incorporates into the indium oxide lattice by substituting the position of indium atoms, which suggests the observed ferromagnetism is intrinsic rather than from Fe clusters or any other magnetic impurity phases.

Electronic structure of Fe-doped In2O3 magnetic semiconductor with oxygen vacancies: Evidence for F-center mediated exchange interaction

Based on the first-principles calculations, the electronic structure and magnetic properties of Fe-doped In2O3 were theoretically investigated. The presence of the predominating defects in oxide, i.e., oxygen vacancies, can lead to strong ferromagnetic coupling between the nearest neighboring Fe cations. Spin density and band-projected charge distribution in the vicinity of the oxygen vacancies reveal that the ferromagnetic exchange is mediated by the donor impurity state, which mainly consists of Fe:3d and Fe:4s electrons trapped in oxygen vacancies. Such results provide direct evidence for the F-center mediated exchange interaction in oxide-based magnetic semiconductors.

Efficient PbS/CdS co-sensitized solar cells based on TiO2 nanorod arrays

Narrow bandgap PbS nanoparticles, which may expand the light absorption range to the near-infrared region, were deposited on TiO2 nanorod arrays by successive ionic layer adsorption and reaction method to make a photoanode for quantum dot-sensitized solar cells (QDSCs). The thicknesses of PbS nanoparticles were optimized to enhance the photovoltaic performance of PbS QDSCs. A uniform CdS layer was directly coated on previously grown PbS-TiO2 photoanode to protect the PbS from the chemical attack of polysulfide electrolytes. A remarkable short-circuit photocurrent density (approximately 10.4 mA/cm2) for PbS/CdS co-sensitized solar cell was recorded while the photocurrent density of only PbS-sensitized solar cells was lower than 3 mA/cm2. The power conversion efficiency of the PbS/CdS co-sensitized solar cell reached 1.3%, which was beyond the arithmetic addition of the efficiencies of single constituents (PbS and CdS). These results indicate that the synergistic combination of PbS with CdS may provide a stable and effective sensitizer for practical solar cell applications.

Passively Q-switched nanosecond erbium-doped fiber laser with MoS 2 saturable absorber

Passively Q-switched nanosecond pulsed erbium-doped fiber laser based on MoS(2) saturable absorber (SA) is experimentally demonstrated. The high quality MoS(2) SA deposited on the broadband high-reflectivity mirror with a large modulation depth of 9% was prepared by pulsed laser deposition method. By inserting the MoS(2) SA into an erbium-doped fiber laser, stable Q-switched operation can be achieved with the shortest pulse width of 660 ns, the maximum pulse energy up to 152 nJ and pulse repetition rates varying from 116 to 131 kHz. The experimental results further verify that MoS(2) possesses the potential advantage for stable Q-switched pulse generation at 1.5 μm.