Yi-Rou Liou

Plant leaf-derived graphene quantum dots and applications for white LEDs

Graphene quantum dots (GQDs) have been prepared for the first time using raw plant leaf extracts of Neem (Azadirachta indica) and Fenugreek (Trigonella foenum-graecum) by a facile, hydrothermal method at 300 °C for 8 hours in water, without the need of any passivizing, reducing agents or organic solvents. High resolution transmission electron microscope studies showed that the average sizes of the GQDs from Neem (N-GQDs) and Fenugreek (F-GQDs) were 5 and 7 nm respectively. N-GQDs and F-GQDs exhibit high quantum yields of 41.2% and 38.9% respectively. Moreover, the GQDs were utilized to prepare a white light converting cap based on the red-green-blue (RGB) color mixing method.

Highly Stretchable and Sensitive Photodetectors Based on Hybrid Graphene and Graphene Quantum Dots

Stretchable devices possess great potential in a wide range of applications, such as biomedical and wearable gadgets and smart skin, which can be integrated with the human body. Because of their excellent flexibility, two-dimensional (2D) materials are expected to play an important role in the fabrication of stretchable devices. However, only a limited number of reports have been devoted to investigating stretchable devices based on 2D materials, and the stretchabilities were restricted in a very small strain. Moreover, there is no report related to the stretchable photodetectors derived from 2D materials. Herein, we demonstrate a highly stretchable and sensitive photodetector based on hybrid graphene and graphene quantum dots (GQDs). A unique rippled structure of poly(dimethylsiloxane) is used to support the graphene layer, which can be stretched under an external strain far beyond published reports. The ripple of the device can overcome the native stretchability limit of graphene and enhance the carrier generation in GQDs due to multiple reflections of photons between the ripples. Our strategy presented here can be extended to many other material systems, including other 2D materials. It therefore paves a key step for the development of stretchable electronics and optical devices.

Diverse Functionalities of Vertically Stacked Graphene/Single layer n-MoS 2 /SiO 2 /p-GaN Heterostructures

Integrating different dimentional materials on vertically stacked p-n hetero-junctions have facinated a considerable scrunity and can open up excellent feasibility with various functionalities in opto-electronic devices. Here, we demonstrate that vertically stacked p-GaN/SiO2/n-MoS2/Graphene heterostructures enable to exhibit prominent dual opto-electronic characteristics, including efficient photo-detection and light emission, which represents the emergence of a new class of devices. The photoresponsivity was found to achieve as high as ~10.4 AW−1 and the detectivity and external quantum efficiency were estimated to be 1.1 × 1010 Jones and ~30%, respectively. These values are superier than most reported hererojunction devices. In addition, this device exhibits as a self-powered photodetector, showing a high responsivity and fast response speed. Moreover, the device demonstrates the light emission with low turn-on voltage (~1.0 V) which can be realized by electron injection from graphene electrode and holes from GaN film into monolayer MoS2 layer. These results indicate that with a suitable choice of band alignment, the vertical stacking of materials with different dimentionalities could be significant potential for integration of highly efficient heterostructures and open up feasible pathways towards integrated nanoscale multi-functional optoelectronic devices for a variety of applications.

Graphene based multiple heterojunctions as an effective approach for high-performance gas sensing

We develop graphene-based multiple heterojunctions to realize sensors with a very high sensitivity (<10 ppm), ultra-fast sensing time (<10 ms), and stable repeatability. The sensing mechanism solely depends on the large change in the Fermi energy (EF) of graphene resulting from the absorbed molecules, which produces a large change in the output current across the heterojunction. The charge induced by the absorbed molecules remains in the graphene layer without transferring into the underlying layer owing to the well-designed band alignment among the constituent materials, which results in ultra-fast and highly sensitive performance. Furthermore, we demonstrate that with different polarities of external bias, the graphene multiple-junction sensors can be used to selectively detect different gases. In addition to the suitable band alignment, the high performance of our device arises from the sandwich structure of top and bottom electrodes, which enables to exponentially enhance the current across the Schott...

An Arbitrary Color Light Emitter

The integration of a light-emitting transistor based on graphene/insulator/semiconductor with downconversion emitters enables the manipulation of emitted light covering the whole chromaticity space, including white-light emission. This novel arbitrary-color light emitter offers a promising approach for new applications in optoelectronic devices ranging from displays to solid-state lighting.