Yih-Shung Lin

Planarized aluminum metallization for sub-0.5 mu m CMOS technology

The authors describe an aluminum sputter process, called the Al-plug process, which results in complete filling of submicron contacts and vias of various sizes. The process can be done in a conventional sputtering system. Material and electrical characterization of the film and the implementation of this process in submicron integrated circuits are presented.<<ETX>>

Thermal Stability of Sputter Deposited Tantallum Silicide Films

Tantallum silicide films were sputter deposited from targets with different Si/Ta stoichiometries. The films were then subjected to thermal treatments. Silicon precipitation was observed on films deposited from silicon rich targets. The effects of silicon precipitates on device characteristics was studied. A method to suppress silicon precipitation is reported.