Yoshikazu Katoh

Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism

Highly reliable TaOx ReRAM has been successfully demonstrated. The memory cell shows stable pulse switching with endurance over 109 cycles, sufficient retention exceeding 10 years at 85degC. TaOx exhibits stable high and low resistance states based on the redox reaction mechanism, confirmed by HX-PES directly for the first time. An 8 kbit 1T1R memory array with a good operating window has been fabricated using the standard 0.18 mum CMOS process.

An 8 Mb Multi-Layered Cross-Point ReRAM Macro With 443 MB/s Write Throughput

Nonvolatile memories with fast write operation at low voltage are required as storage devices to exceed flash memory performance. We develop an 8Mb multi-layered cross-point ReRAM macro with 443MB/S write throughput (64b parallel write per 17.2ns cycle), which is almost twice as fast as existing methods, using the fast-switching performance of TaOχ ReRAM and the following three techniques to reduce the sneak current in bipolar type cross-point cell array structure in an 0.18μm process. First, memory cell and array technologies reduce the sneak current with a newly developed bidirectional diode as a memory cell select element for the first time. Second, we use a hierarchical bitline (BL) structure for multi-layered cross-point memory with fast and stable current control. Third, we implement a multi-bit write architecture that realizes fast write operation and suppresses sneak current. This work is applicable to both high-density stand-alone and embedded memory with more stacked memory arrays and/or scaling memory cells.

Demonstration of high-density ReRAM ensuring 10-year retention at 85°C based on a newly developed reliability model

A new oxygen diffusion reliability model for a high-density bipolar ReRAM is developed based on hopping conduction in filaments, which allows statistical predication of activation energy. The filament in the active cells is confirmed by EBAC and TEM directly for the first time. With optimized filament size, a 256-kbit ReRAM with long-term retention exceeding 10 years at 85°C is successfully demonstrated.

Electroforming and resistance-switching mechanism in a magnetite thin film

The electroforming and the resistance-switching behaviors in magnetite, Fe3O4, by the application of an appropriate electric field are demonstrated on a lateral device with multiple electrodes. By means of this device, both the location and the nature of the change in Fe3O4 are specified from the electrical measurements and Raman spectroscopy. The switching phenomenon is caused in maghemite, γ-Fe2O3, which is formed by oxidation of Fe3O4, near an interface of an anode. The authors argue that the switching motion is originated in a redox reaction between the Fe3O4 and γ-Fe2O3.

Fast switching and long retention Fe-O ReRAM and its switching mechanism

A novel iron oxide (Fe-O) ReRAM is proposed and its high-speed resistance-switching of 10 ns is demonstrated. The switching mechanism is confirmed as a redox reaction between Fe₃O₄ and y-Fe₂O₃. Based on this model, we have achieved long-retention characteristics by introducing Zn atoms to suppress the reduction process.

Filament scaling forming technique and level-verify-write scheme with endurance over 107 cycles in ReRAM

Resistive RAM (ReRAM) has been recently developed for applications that require higher speed and lower voltage than Flash memory is able to provide. One of the applications is micro-controller units (MCUs) or SoCs with several megabits of embedded ReRAM. Another is solid-state drives (SSDs) where a combination of higher-density ReRAM and NAND flash memory would achieve high-performance and high-reliability storage [1], suitable for server applications for future cloud computing. ReRAM is attractive for several reasons. First, it operates at high speed and low voltage. Second, it enables high density due to the simple structure of the resistive element (RE) [2]. Third, it is immune to external environment such as magnetic fields or radiation, since the resistive switching is based on the redox reaction [3].

Retention Model for High-Density ReRAM

A retention model for both the high resistance state and low resistance state of the bipolar ReRAM is developed. Degradation of resistance is caused by the oxygen vacancy profile in filament changing due to oxygen diffusion.

A ReRAM-based physically unclonable function with bit error rate < 0.5% after 10 years at 125°C for 40nm embedded application

This paper presents a secure application-a physically unclonable function (PUF)-that uses the physical property of resistive random access memory (ReRAM). The proposed PUF-generating method and reproducing algorithm achieves highly reliable with bit error rate (BER) <; 0.5% and reproduction exceeding 1010 times at -40 to 125°C after 10 years at 125°C and high uniqueness as evidenced by passing NIST tests. Evaluations on 40nm ReRAM test chips have demonstrated the feasibility of a scaled-down ReRAM cell enhanced with PUF.

True random number generator using current difference based on a fractional stochastic model in 40-nm embedded ReRAM

We have successfully developed a robust ReRAM true random number generator, using current difference, that does not require extra chip area. True random numbers are guaranteed by the current difference in the 1/fβ noise generated by Brownian motion, as tested using a fractional SDE model and verified using 1/fβ noise distribution. A highly reliable 40-nm ReRAM true random number generator circuit was designed and passed NIST SP800-22 randomness tests across all combinations of voltage (VDD ± 0.1 V) and temperature (−40 to 125 °C). The random number throughput achieves 32 Mbps with a low power consumption of 0.04 nJ/bit.