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Dive into the research topics where Takumi Mikawa is active.

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Featured researches published by Takumi Mikawa.


international electron devices meeting | 2008

Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism

Zhiqiang Wei; Yoshihiko Kanzawa; K. Arita; Yoshikazu Katoh; Ken Kawai; Shunsaku Muraoka; S. Mitani; Satoru Fujii; Koji Katayama; M. Iijima; Takumi Mikawa; Takeki Ninomiya; R. Miyanaga; Y. Kawashima; K. Tsuji; Atsushi Himeno; T. Okada; Ryotaro Azuma; Kazuhiko Shimakawa; H. Sugaya; Takeshi Takagi; R. Yasuhara; K. Horiba; H. Kumigashira; Masaharu Oshima

Highly reliable TaOx ReRAM has been successfully demonstrated. The memory cell shows stable pulse switching with endurance over 109 cycles, sufficient retention exceeding 10 years at 85degC. TaOx exhibits stable high and low resistance states based on the redox reaction mechanism, confirmed by HX-PES directly for the first time. An 8 kbit 1T1R memory array with a good operating window has been fabricated using the standard 0.18 mum CMOS process.


international solid-state circuits conference | 2012

An 8 Mb Multi-Layered Cross-Point ReRAM Macro With 443 MB/s Write Throughput

Akifumi Kawahara; Ryotaro Azuma; Yuuichirou Ikeda; Ken Kawai; Yoshikazu Katoh; Kouhei Tanabe; Toshihiro Nakamura; Yoshihiko Sumimoto; Naoki Yamada; Nobuyuki Nakai; Shoji Sakamoto; Yukio Hayakawa; Kiyotaka Tsuji; Shinichi Yoneda; Atsushi Himeno; Kenichi Origasa; Kazuhiko Shimakawa; Takeshi Takagi; Takumi Mikawa; Kunitoshi Aono

Nonvolatile memories with fast write operation at low voltage are required as storage devices to exceed flash memory performance. We develop an 8Mb multi-layered cross-point ReRAM macro with 443MB/S write throughput (64b parallel write per 17.2ns cycle), which is almost twice as fast as existing methods, using the fast-switching performance of TaOχ ReRAM and the following three techniques to reduce the sneak current in bipolar type cross-point cell array structure in an 0.18μm process. First, memory cell and array technologies reduce the sneak current with a newly developed bidirectional diode as a memory cell select element for the first time. Second, we use a hierarchical bitline (BL) structure for multi-layered cross-point memory with fast and stable current control. Third, we implement a multi-bit write architecture that realizes fast write operation and suppresses sneak current. This work is applicable to both high-density stand-alone and embedded memory with more stacked memory arrays and/or scaling memory cells.


international electron devices meeting | 2011

Demonstration of high-density ReRAM ensuring 10-year retention at 85°C based on a newly developed reliability model

Z. Wei; Takeshi Takagi; Yoshihiko Kanzawa; Yoshikazu Katoh; Takeki Ninomiya; Ken Kawai; Shunsaku Muraoka; Satoru Mitani; Koji Katayama; Satoru Fujii; Ryoko Miyanaga; Yoshio Kawashima; Takumi Mikawa; Kazuhiko Shimakawa; Kunitoshi Aono

A new oxygen diffusion reliability model for a high-density bipolar ReRAM is developed based on hopping conduction in filaments, which allows statistical predication of activation energy. The filament in the active cells is confirmed by EBAC and TEM directly for the first time. With optimized filament size, a 256-kbit ReRAM with long-term retention exceeding 10 years at 85°C is successfully demonstrated.


Applied Physics Letters | 2007

Electroforming and resistance-switching mechanism in a magnetite thin film

Akihiro Odagawa; Yoshikazu Katoh; Yoshihiko Kanzawa; Z. Wei; Takumi Mikawa; Shunsaku Muraoka; Takeshi Takagi

The electroforming and the resistance-switching behaviors in magnetite, Fe3O4, by the application of an appropriate electric field are demonstrated on a lateral device with multiple electrodes. By means of this device, both the location and the nature of the change in Fe3O4 are specified from the electrical measurements and Raman spectroscopy. The switching phenomenon is caused in maghemite, γ-Fe2O3, which is formed by oxidation of Fe3O4, near an interface of an anode. The authors argue that the switching motion is originated in a redox reaction between the Fe3O4 and γ-Fe2O3.


Japanese Journal of Applied Physics | 1996

Ferroelectric Nonvolatile Memory Technology and Its Applications

Tatsumi Sumi; Yuji Judai; Kanji Hirano; Toyoji Ito; Takumi Mikawa; Masato Takeo; Masamichi Azuma; Shin–ichiro Hayashi; Yasuhiro Uemoto; Koji Arita; Toru Nasu; Yoshihisa Nagano; Atsuo Inoue; Akihiro Matsuda; Eiji Fuji; Yasuhiro Shimada; Tatsuo Otsuki

Nonvolatile memory utilizing ferroelectric material is expected to be the ultimate memory due to its theoretical low power operation and fast access. We integrated a ferroelectric thin film using a standard complementary metal-oxide-semiconductor (CMOS) process and evaluated its basic characteristics and reliability including endurance and imprint effect. The film was prepared using a spin-on sol-gel method. A ferroelectric thin film formed using liquid source misted chemical deposition (LSMCD) was found to have almost the same characteristics as those of the film formed by the sol-gel method. No effects of the ferroelectric process on the CMOS transistors were observed. Design of ferroelectric memory cells and applications of the ferroelectric nonvolatile memory have been reviewed.


international electron devices meeting | 2007

Fast switching and long retention Fe-O ReRAM and its switching mechanism

Shunsaku Muraoka; K. Osano; Yoshihiko Kanzawa; Satoru Mitani; Satoru Fujii; Koji Katayama; Yoshikazu Katoh; Z. Wei; Takumi Mikawa; K. Arita; Yoshio Kawashima; Ryotaro Azuma; Ken Kawai; Kazuhiko Shimakawa; A. Odagawa; Takeshi Takagi

A novel iron oxide (Fe-O) ReRAM is proposed and its high-speed resistance-switching of 10 ns is demonstrated. The switching mechanism is confirmed as a redox reaction between Fe<sub>3</sub>O<sub>4</sub> and y-Fe<sub>2</sub>O<sub>3</sub>. Based on this model, we have achieved long-retention characteristics by introducing Zn atoms to suppress the reduction process.


symposium on vlsi technology | 2012

Conductive filament scaling of TaO x bipolar ReRAM for long retention with low current operation

Takeki Ninomiya; Takeshi Takagi; Z. Wei; Shunsaku Muraoka; Ryutaro Yasuhara; Koji Katayama; Yuuichirou Ikeda; Ken Kawai; Y. Kato; Yoshio Kawashima; S. Ito; Takumi Mikawa; Kazuhiko Shimakawa; Kunitoshi Aono

We demonstrate for the first time that the density of oxygen vacancy in a conductive filament plays a key role in ensuring data retention. We achieve very good retention results up to 100 hours at 150°C even under the low current operation due to the scaling of conductive filament size while retaining sufficiently high density of oxygen vacancy.


international solid-state circuits conference | 2013

Filament scaling forming technique and level-verify-write scheme with endurance over 107 cycles in ReRAM

Akifumi Kawahara; Ken Kawai; Yuuichirou Ikeda; Yoshikazu Katoh; Ryotaro Azuma; Yuhei Yoshimoto; Kouhei Tanabe; Zhiqiang Wei; Takeki Ninomiya; Koji Katayama; Ryutaro Yasuhara; Shunsaku Muraoka; Atsushi Himeno; Naoki Yoshikawa; Hideaki Murase; Kazuhiko Shimakawa; Takeshi Takagi; Takumi Mikawa; Kunitoshi Aono

Resistive RAM (ReRAM) has been recently developed for applications that require higher speed and lower voltage than Flash memory is able to provide. One of the applications is micro-controller units (MCUs) or SoCs with several megabits of embedded ReRAM. Another is solid-state drives (SSDs) where a combination of higher-density ReRAM and NAND flash memory would achieve high-performance and high-reliability storage [1], suitable for server applications for future cloud computing. ReRAM is attractive for several reasons. First, it operates at high speed and low voltage. Second, it enables high density due to the simple structure of the resistive element (RE) [2]. Third, it is immune to external environment such as magnetic fields or radiation, since the resistive switching is based on the redox reaction [3].


international memory workshop | 2012

Retention Model for High-Density ReRAM

Z. Wei; Takeshi Takagi; Yoshihiko Kanzawa; Yoshikazu Katoh; Takeki Ninomiya; Ken Kawai; Shunsaku Muraoka; Satoru Mitani; Koji Katayama; Satoru Fujii; Ryoko Miyanaga; Yoshio Kawashima; Takumi Mikawa; Kazuhiko Shimakawa; Kunitoshi Aono

A retention model for both the high resistance state and low resistance state of the bipolar ReRAM is developed. Degradation of resistance is caused by the oxygen vacancy profile in filament changing due to oxygen diffusion.


international electron devices meeting | 2015

Distribution projecting the reliability for 40 nm ReRAM and beyond based on stochastic differential equation

Zhiqiang Wei; Koji Eriguchi; Shunsaku Muraoka; Koji Katayama; Ryutaro Yasuhara; Ken Kawai; Yuuichirou Ikeda; M. Yoshimura; Yukio Hayakawa; Kazuhiko Shimakawa; Takumi Mikawa; Shinichi Yoneda

A physical analytic formula based on Stochastic Differential Equation was successfully developed to describe intrinsic ReRAM variation. The formula was proved useful for projecting scaled ReRAM memory window and resistance distribution after long-term retention, verified by testing 40 nm 2-Mbit ReRAM. The formula also centered on practical and quantitative filament characterization.

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