Yoshinori Odake
Panasonic
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Publication
Featured researches published by Yoshinori Odake.
Japanese Journal of Applied Physics | 2001
M. Arai; Takahiko Hashidzume; Toshinari Nitta; Yoshinori Odake; Ichiro Matsuo
In this work, an experimental analysis of gate disturbance degradation with negative bias stress caused by nitridation of flash tunnel oxide has been performed. Nitrided tunnel oxide successfully suppresses gate disturbance with positive bias stress, however, it enhances gate disturbance with negative bias stress. A similar gate polarity dependence has been observed in charge-to-breakdown and gate voltage shifts during Fowler-Nordheim stress. We propose the following dual-quality-layer model, which can explain all the polarity results. A poor-quality layer compared with base oxide is concurrently formed at the region where nitrogen atoms do not exist during nitridation. Subsequent to program/erase stress, more hole traps are created at the surface of tunnel oxide and modulate the energy band at the surface of tunnel oxide. Therefore, electrons can easily tunnel through the oxide with a negative bias stress because of the reduced barrier height at the surface of tunnel oxide.
Archive | 1992
Yoshinori Odake; Yasushi Okuda
Archive | 2001
Yoshinori Odake; Takashi Maejima; Hidenori Tanaka; Mitsuyoshi Andou; Toshimoto Kubota
Archive | 1995
Yoshinori Odake; Akira Asai; Yasushi Okuda; Toshiki Mori; Ichirou Nakao
Archive | 2006
Yoshinori Odake; Takashi Maejima; Hidenori Tanaka; Mitsuyoshi Andou
Archive | 1995
Yasushi Okuda; Yoshinori Odake; Ichiro Nakao; Youhei Ichikawa
Archive | 1994
Okuda Yasushi; Yoshinori Odake; Ichiro Nakao; Youhei Ichikawa
Archive | 1996
Yoshinori Odake; Akira Asai; Yasushi Okuda; Toshiki Mori; Ichirou Nakao
Archive | 2001
Takahiko Hashidzume; Yoshinori Odake
Archive | 1998
Mitsuyoshi Andou; Toshimoto Kubota; Takashi Maejima; Yoshinori Odake; Hidenori Tanaka