Yoshinori Tomihari

Carbon-nanotube-based triode-field-emission displays using gated emitter structure

We fabricated a carbon-nanotube-based triode-field-emission display with a gated emitter structure made up of a gate layer, a thin insulating layer, and a carbon nanotube layer. A low threshold voltage of 20 V and a total anode current of 0.5 mA at 80 V were observed for 30/spl times/30 pixel panels. We also demonstrated highly efficient and homogeneous emission from all pixels at voltages lower than 100 V. Based on simulation of electric fields in gate holes, further improvement of the emission properties is expected by optimizing its structural parameters, such as the gate-hole diameter.

A novel vertical current limiter fabricated with a deep trench forming technology for highly reliable field emitter arrays

We have developed highly reliable field emitter arrays with a novel vertical current limiter fabricated with a deep trench forming technology. The vertical current limiter has a local current-control function that automatically prevents fatal arc failure, and it has low resistance when used in the normal operation of a field emitter array. It has demonstrated a breakdown voltage as high as 120 V and a negligible increase in operation voltage, i.e., Vg of 70 V at 1 /spl mu/A/tip with an emitter cone density of more than 5/spl times/10/sup 7/ emitters/cm/sup 2/.

Si field emitter array with 90-nm-diameter gate holes

We have successfully developed an extremely scaled-down Si field emitter array with 90-nm-diameter gates. The developed field emitter array has a unique two-step thick insulator underneath the gate electrode, which enables the insulator to be kept thick and which enables the long creeping distance between the emitter and the gate electrodes to be maintained even if the gate diameter is reduced. A fabricated field emitter array has an extremely small gate diameter of 90 nm and shows a low threshold voltage of 22 V at 1 nA/tip.

A field-emitter-array cathode-ray tube (FEA-CRT)

High-resolution bright CRT monitors with Spindt-type field-emitter arrays (FEA-CRTs) as electron guns have been realized for the first time. The FEA chip consists of 868 electron sources arranged within an emitter circle 50 μm in diameter and a vertical current limiter (VECTL) which protects the FEA chips from damage caused by an arc electric discharge. The FEA-CRT has a minimum electron beam diameter of 0.84 mm at 18 kV and 100 μA.