Network


Latest external collaboration on country level. Dive into details by clicking on the dots.

Hotspot


Dive into the research topics where Yoshiyuki Hisada is active.

Publication


Featured researches published by Yoshiyuki Hisada.


Japanese Journal of Applied Physics | 1997

Observation of Gain and Double-pass Amplification of Li-like Al Soft X-ray Transitions in a Recombining Plasma Pumped by a Pulse-train YAG Laser

N. Yamaguchi; Tamio Hara; Chiemi Fujikawa; Yoshiyuki Hisada

A pulse-train yttrium aluminium garnet (YAG) laser was used with a shaped envelope, as well as a new lens system for producing a dotted-line irradiation pattern in X-ray laser experiments. Amplified spontaneous emission (ASE) signals of the two Li-like Al transitions (3d-4f, 15.47 nm and 3p-4d, 15.06 nm) were observed with a pumping energy of only 1.5–2 J. The gain coefficient were approximately 3 cm-1 for the 3d-4f line and was maintained for a period of about 1 ns. The double-pass amplification experiment was carried out using a plane multilayer mirror. A clear increase in the above two Li-like Al transition lines was observed. It is highly expected that a strong laser amplification could be achieved in an X-ray laser cavity with two multilayer X-ray mirrors.


Japanese Journal of Applied Physics | 1998

Debris from High-Aspect-Ratio Rectangular Focused Laser Irradiation on a Tape Target Surface in an X-Ray Laser System

Yoshiyuki Hisada; Petros Abraha; Kiichi Takamoto; N. Yamaguchi; Tamio Hara

This study measures the distribution of debris ejected from an aluminum tape target subjected to laser irradiation. The irradiation area is rectangular with a high aspect ratio of 67. The power density of the laser beam is 8×1010 W/cm2 at the irradiation surface. The ejected debris is collected on a plane parallel to the target surface. The angular distribution of debris thickness in the direction parallel to the longer side of the irradiation area is cos 60θh. Similarly, the angular distribution of debris thickness in the direction parallel to the shorter side of the irradiation area is cos 5θv, where the angles θh and θv are deviations from the irradiation surface normal in the horizontal and vertical directions, respectively. An additional feature is the sacrificial film feed mechanism designed to shield the laser beam entrance window from debris deposition. Based on the angular distribution of debris thickness, the film feed rate is adjusted to ensure delivery of the required beam energy at the target surface.


Optical Science, Engineering and Instrumentation '97 | 1997

Study of tabletop x-ray laser pumped by a YAG laser

Tamio Hara; Naohiro Yamaguchi; Tadayuki Ohchi; Chiemi Fujikawa; Yoshiyuki Hisada; Asuka Ogata; Kazunobu Okasaka

X-ray lasings of Li-like Al ion in the recombination scheme have been investigated using a tabletop pulse-train YAG laser system. Two types of cavity experiments have been carried out, one is an unstable resonator consisting of two flat Mo/Si multilayer mirrors and the other is that with a concave mirror. Clear enhancement in the Li-like Al transition lines at 15.47 nm has been observed for both types of cavities as a high peak in line intensity preceding the plasma emission. The observed feature of the preceding emission can be reproduced by the raytrace calculation.


Archive | 2002

Method of fabricating SiC semiconductor device

Yoshiyuki Hisada; Eiichi Okuno; Takeshi Hasegawa


Archive | 2003

Silicon carbide semiconductor device having enhanced carrier mobility

Yoshiyuki Hisada; Eiichi Okuno; Yoshihito Mitsuoka; Shinji Amano; Takeshi Endo; Shinichi Mukainakano; Ayahiko Ichimiya


Archive | 2001

Method of producing silicon carbide device by cleaning silicon carbide substrate with oxygen gas

Yoshiyuki Hisada; Shinichi Mukainakano; Takeshi Hasegawa; Ayahiko Ichimiya; Tomohiro Aoyama; Kiyoshige Kato


Archive | 2005

Siliziumkarbid-Halbleiterbauelement und Verfahren zu dessen Herstellung Silicon carbide semiconductor device and process for its preparation

Jun Kojima; Takeshi Endo; Eiichi Okuno; Yoshihito Mitsuoka; Yoshiyuki Hisada; Hideo Matsuki


Archive | 2005

Silicon carbide semiconductor device and process for its preparation

Jun Kojima; Takeshi Endo; Eiichi Okuno; Yoshihito Mitsuoka; Yoshiyuki Hisada; Hideo Matsuki


Archive | 2003

Siliciumcarbidhalbleiteranordnung mit erhöhter Trägerbeweglichkeit Siliciumcarbidhalbleiteranordnung having increased carrier mobility

Yoshiyuki Hisada; Eiichi Okuno; Yoshihito Mitsuoka; Shinji Amano; Takeshi Endo; Shinichi Mukainakano; Ayahiko Ichimiya


Japanese Journal of Applied Physics | 2002

Structural Study of the SiC(0001)(√ X √ )-R30°Surfaces by Reflection High-Energy Electron Diffraction Rocking Curves : Semiconductors

Tomohiro Aoyama; Yoshiyuki Hisada; Shinichi Mukainakano; Ayahiko Ichimiya

Collaboration


Dive into the Yoshiyuki Hisada's collaboration.

Top Co-Authors

Avatar

Ayahiko Ichimiya

Japan Atomic Energy Agency

View shared research outputs
Top Co-Authors

Avatar

Tamio Hara

Toyota Technological Institute

View shared research outputs
Top Co-Authors

Avatar
Top Co-Authors

Avatar

Chiemi Fujikawa

Toyota Technological Institute

View shared research outputs
Researchain Logo
Decentralizing Knowledge