Hideo Matsuki
Denso
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Publication
Featured researches published by Hideo Matsuki.
Materials Science Forum | 2005
Eiichi Okuno; Takeshi Endo; Hideo Matsuki; Toshio Sakakibara; Hiroaki Tanaka
In our previous paper [1], we simulated an accumulation-mode MOSFET with an epitaxial layer channel (epi-channel) that had a high channel mobility. In this paper, we experimentally show that channel mobility is enhanced by the epi-channel. On varying the thickness of the epi-channel, the channel mobility improved from a few cm2/Vs to 100 cm2/Vs. Finally, we show that the “Normally-off” accumulation MOSFET with a 720 V breakdown voltage has a low on-resistance (10.4 m1cm2) and that the 3 × 3 mm2 accumulation MOSFET operates over 10 A and its on-resistance is 19 m1cm2.
Archive | 2009
Naohiro Suzuki; Eiichi Okuno; Hideo Matsuki
Archive | 1996
Kunihiko Sasaki; Masanobu Yukumatsu; Toshiya Saito; Hideo Matsuki; Hiroshi Hazumi
Archive | 2001
Takeshi Endo; Hideo Matsuki; 英夫 松木; 剛 遠藤
Archive | 2016
Hidefumi Takaya; Hideo Matsuki; Naohiro Suzuki; Tsuyoshi Ishikawa
Archive | 2015
Hideo Matsuki; Shinichiro Miyahara; Hidekazu Okuno; Masahiro Suzuki; Kensaku Yamamoto; Toshimasa Yamamoto; 英一 奥野; 真一朗 宮原; 建策 山本; 山本 敏雅; 英夫 松木; 巨裕 鈴木
Archive | 1996
Kunihiko Sasaki; Masanobu Yukumatsu; Toshiya Saito; Hideo Matsuki; Hiroshi Hazumi
Archive | 2010
Takeshi Ishikawa; Hideo Matsuki; Shigemasa Soejima; Masahiro Sugimoto; Masahiro Suzuki; Yukihiko Watanabe; 成雅 副島; 雅裕 杉本; 英夫 松木; 行彦 渡辺; 剛 石川; 巨裕 鈴木
SAE 2012 World Congress & Exhibition | 2012
Hideo Matsuki; Kensaku Yamamoto; Masanori Nagaya; Hiroki Watanabe; Eiichi Okuno; Toshimasa Yamamoto; Shoichi Onda
Archive | 2012
Tsuyoshi Ishikawa; Hideo Matsuki; Masato Noborio; Narumasa Soejima; Masahiro Sugimoto; Hidefumi Takaya; Yukihiko Watanabe; Kensaku Yamamoto
