Young-ki Ha

Magnetic tunnel junction and memory device including the same

Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier, and methods for forming the same

METHODS OF FORMING MAGNETIC RANDOM ACCESS MEMORY DEVICES HAVING TITANIUM-RICH LOWER ELECTRODES WITH OXIDE LAYER AND ORIENTED TUNNELING BARRIER

Magnetic tunnel junction structure having an oxidized buffer layer and method of fabricating the same

Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier

Magnetic random access memory devices including contact plugs between magnetic tunnel junction structures and substrates and related methods

Method of writing to MRAM devices

Magnetic random access memory device and method of forming the same

Magnetic tunnel junction structures having bended tips at both ends thereof, magnetic random access memory cells employing the same and photomasks used in formation thereof

Methods of Forming Magnetic Random Access Memory Devices Including Contact Plugs Between Magnetic Tunnel Junction Structures and Substrates