Young-man Jang

Highly scalable STT-MRAM with 3-dimensional cell structure using in-plane magnetic anisotropy materials

Novel spin transfer torque MRAM cells with three dimensional freelayer structures were suggested for the high density memory below 20nm technology node. By folding the freelayer to a special geometry, the 3D MTJ Cell structure retains large freelayer volume without an increase of cell foot-print, scaling down the MRAM cells even with in-plane magnetic anisotropy materials. From the micromagnetic calculation with Nudged Elastic Band (NEB) method, we confirmed the thermal stability over 60 in 3D MTJ cell with 15×30 nm2 area.

Suppression of CoSix Induced Leakage Current Using Novel Capping Process for Sub-0.10um node SRAM Cell Technology

We present a novel capping process for sub-0.10um node SRAM cell to suppress the Co silicide induced leakage current. The dimensions in the SRAM cell are scaled down to sub-0.10um. As a result, the CoSix induced leakage current increases as the sizes of the contact and the active area decrease due to the CoSix defects and the contact etch induced CoSix pitting. The double stacked layers on Co silicide successfully reduced the junction leakage current and widened the borderless contact etching process window by suppression of the CoSix defects and the Co silicide pittings.