Yuho Kanaya

Optical alignment optimizations for reducing wafer-induced shift

Detecting the position of wafers after chemical mechanical polishing (CMP) is a critical issue in current and forthcoming IC manufacturing. A wafer alignment system must be highly accurate for all processes. To satisfy such requirements, we have studied and analyzed factors that have made alignment difficult. From the results of the studies, we have developed new optical alignment optimizations that improve the accuracy of FIA (wafer alignment sensor of Nikons exposure system) and examined them. The approaches are optimizing the focus position based on new classification of measurement errors, developing an advanced algorithm for position determination, and selecting a suitable mark design. The new classification method classifies measurement errors into errors caused by light amplitude errors and errors caused by phase errors. In the experiment, we have fabricated special wafers that make it possible to evaluate the influence of CMP processes on the alignment accuracy. The simulation and experimental results show that overlay error decreases markedly with the new alignment optimizations. FIA with these new optimizations will be highly accurate and suitable alignment sensor for CMP and other processes of future-generation LSI production.

Outlier rejection with mixture models in alignment

Outliers in measurement often interfere with alignment. They are caused by sudden damages in the alignment mark, and existence of particles, resist damages and so on. In a conventional way to identify outliers, the observations that have larger residual than previously determined threshold are identified as outlier. It works well only with the operator’s labor of adjusting the threshold according to the deviation of ordinaries (non-outliers). However, labor is a problem especially in Small-Quantity Large-Variation fabrication such as for ASIC, System-LSI and so on. A novel method for elimination of the labor has been developed. It utilizes normal mixture models whose number of components is determined based on the Maximum Penalized Likelihood (MPL) method. It can be regarded as an identification method that determines threshold adaptively using ordinaries’ deviation. Simulation results show that the penalty coefficient, the only parameter of the method, can be a constant in the variation of ordinaries deviation. It also shows that in the absence of outliers, the accuracy of the method is comparable with the maximum likelihood estimation that is commonly considered to be the best method when the observations follow the normal distribution. The method performs better than conventional ones when there are a sufficient number of observations (no less than ten) in the standard Enhanced Global Alignment (EGA). Superiority of the adaptive method is dependent upon the probability of outlier occurrence, variation of the situation, the number of observations and the complexity of the model fitted to the observations.

Innovative optical alignment technique for CMP wafers

Detecting position of the wafers such as after CMP process is critical theme of current and forthcoming IC manufacturing. The alignment system must be with high accuracy for any process. To satisfy such requirements, we have studied and analyzed factors that have made alignment difficult. From the result of the studies, we have developed new optical alignment techniques which improve the accuracy of FIA (alignment sensor of Nikons NSR series) and examined them. The approaches are optimizing the focus position, developing an advanced algorithm for position detection, and selecting a suitable mark design. For experiment, we have developed the special wafers that make it possible to evaluate the influence of CMP processes. The experimental results show that the overlay errors decrease dramatically with the new alignment techniques. FIA with these new techniques will be much accurate and suitable alignment sensor for CMP and other processes of future generation ULSI production.

Improving the measurement algorithm for alignment

As semiconductor design rules decrease, tighter tolerances are required for alignment. Improvement of the measurement algorithm can make a considerable contribution to reduction of the overlay error. An algorithm makes the alignment accuracy greatly improved that utilizes wavelet transform and uses information about image asymmetry. Experimental result using the Alignment Data Logging System shows that there is a process that the algorithm reduces the overlay error from over 100nm (3(sigma) ) to under 50nm. Two other algorithms are also introduced that are an interpolation method that reduces error from image sampling and a mark recognition method that reduces measurement failures focusing on some kinds of symmetry of the alignment mark.

Advanced alignment optical system for DUV scanner

Advanced scanners need an extremely high accuracy wafer alignment system, and nowadays it is also necessary that the alignment marks occupy a smaller area in order to expand the available area for IC patterns. Therefore, narrower lines with a smaller pitch must form the alignment marks. In this paper, a higher Numerical Aperture (NA) and lower aberration alignment optical system are studied for these requirements. At first the small alignment marks are shown, and suitable NA in the optical system is then discussed. As a result, the necessity for higher NA is shown. As for low aberration, the necessary specification of wavefront aberration is discussed. Assuming it is possible to suitably select the NA and the illumination NA in the optical system, the results of simulation -- that simulate image signals and perform image processing -- are reported. These results show the optical system that has aberration causes position shift, so that the specification of wavefront aberration is estimated in order that the position shifts may be sufficiently small. To make sure that with such a strict specification the system will be possible, a trial optical system has been made. Finally the techniques of manufacturing and the results of evaluation are reported.

Development of customer assistance software for alignment parameter optimization

Wafer alignment plays a significant role in the advancement of microlithography and has been constantly improved to meet various situations. As a result, its configuration is very dynamic and it sometimes requires considerable cost for process optimization. Software has been developed which evaluates the alignment performance in a variety of conditions from the minimal data set. It allows the user to perform off-line optimization, essentially reducing the amount of interruption toward production. This article illustrates the simulation method implemented in the software, OverLay EValuation program (OLEV).