Yul Kyo Chung

Improvement of Leakage Current Characteristics by Plasma Treatment in Bi2Mg2 ∕ 3Nb4 ∕ 3O12 Dielectric Thin Films

Bismuth magnesium niobate (BMN) thin films deposited on Cu/Ti/Si substrates at 100°C by pulsed laser deposition were investigated for the effect of plasma treatment on dielectric and leakage current characteristics. The dielectric constant and dissipation factor of 60 nm thick films slightly decrease with increasing oxygen content in atmosphere of plasma treatment. The leakage current densities were improved with increasing oxygen content. The capacitance density and breakdown voltage of the films treated with N 2 :O 2 = 100:100 seem (standard cm 3 /min) were approximately 520 nF/cm 2 and 3 V, respectively. On the other hand, 100 nm thick BMN films treated by plasma at N 2 :O 2 = 100:100 sccm exhibit a leakage current density of approximately 6 X 10 -7 A/cm 2 at 10 V and a breakdown voltage above 10 V which is possible for embedded capacitor applications.

Dielectric Properties of PCB Embedded Bismuth-Zinc-Niobium Films Prepared using RF Magnetron Sputtering

Dielectric properties of bismuth-zinc-niobium oxide (Bi 1.5 Zn 1.0 Nb 1.5 O 7 , BZN) thin films have been investigated for embedded capacitor. Crystalline BZN has a pyrochlore structure in nature and shows a dielectric constant of ∼ 200 and very low leakage current when crystallized. Since the process temperature is limited to 2 and leakage current less than 1 μA/cm 2 at 3V.