Yves Rody

Improving model-based OPC performance for the 65-nm node through calibration set optimization

As lithography continues to increase in difficulty with low k1 factors, and ever-tighter process margins, model-based optical proximity correction (OPC) is being used for the majority of patterning layers. As a result, the engineering effort consumed by the development and calibration of OPC models is continuing to increase at an alarming rate. One of the major focal points of this effort is the increasing emphasis on improving the accuracy of the model-based OPC corrections. One of the major contributors to final OPC accuracy is the quality of the resist model. As a result of these trends, the number of sample points used to calibrate OPC models is increasing rapidly from generation to generation. However, this increase is largely due to an antiquated approach to the construction of these calibration sets, focusing on structure variations. In this study, a new approach to the calibration of a resist model will be proposed based upon the location of calibration structures within the actual resist space over which the resist model is expected to be predictive.

High accuracy 65nm OPC verification: full process window model vs. critical failure ORC

It is becoming more and more difficult to ensure robust patterning after OPC due to the continuous reduction of layout dimensions and diminishing process windows associated with each successive lithographic generation. Lithographers must guarantee high imaging fidelity throughout the entire range of normal process variations. The techniques of Mask Rule Checking (MRC) and Optical Rule Checking (ORC) have become mandatory tools for ensuring that OPC delivers robust patterning. However the first method relies on geometrical checks and the second one is based on a model built at best process conditions. Thus those techniques do not have the ability to address all potential printing errors throughout the process window (PW). To address this issue, a technique known as Critical Failure ORC (CFORC) was introduced that uses optical parameters from aerial image simulations. In CFORC, a numerical model is used to correlate these optical parameters with experimental data taken throughout the process window to predict printing errors. This method has proven its efficiency for detecting potential printing issues through the entire process window [1]. However this analytical method is based on optical parameters extracted via an optical model built at single process conditions. It is reasonable to expect that a verification method involving optical models built from several points throughout PW would provide more accurate predictions of printing errors for complex features. To verify this approach, compact optical models similar to those used for standard OPC were built and calibrated with experimental data measured at the PW limits. This model is then applied to various test patterns to predict potential printing errors. In this paper, a comparison between these two approaches is presented for the poly layer at 65 nm node patterning. Examples of specific failure predictions obtained separately with the two techniques are compared with experimental results. The details of implementing these two techniques on full product layouts are also included in this study.

Investigation of model-based physical design restrictions (Invited Paper)

As lithography and other patterning processes become more complex and more non-linear with each generation, the task of physical design rules necessarily increases in complexity also. The goal of the physical design rules is to define the boundary between the physical layout structures which will yield well from those which will not. This is essentially a rule-based pre-silicon guarantee of layout correctness. However the rapid increase in design rule requirement complexity has created logistical problems for both the design and process functions. Therefore, similar to the semiconductor industrys transition from rule-based to model-based optical proximity correction (OPC) due to increased patterning complexity, opportunities for improving physical design restrictions by implementing model-based physical design methods are evident. In this paper we analyze the possible need and applications for model-based physical design restrictions (MBPDR). We first analyze the traditional design rule evolution, development and usage methodologies for semiconductor manufacturers. Next we discuss examples of specific design rule challenges requiring new solution methods in the patterning regime of low K1 lithography and highly complex RET. We then evaluate possible working strategies for MBPDR in the process development and product design flows, including examples of recent model-based pre-silicon verification techniques. Finally we summarize with a proposed flow and key considerations for MBPDR implementation.

Combination multiple focal planes and PSM for sub 120 nm node with KrF lithography: study of the proximity effects

In optical lithography, the use of multiple focal planes with different energy and focus improves the photolithography performances like the Depth of Focus (DOF) and the Energy Latitude (EL). We have chosen to use a symmetrical double exposure (symmetrical in focus) with equal energy, an attenuated (6%) phase shift mask and the standard KrF photolithography process in the study of 180 nm holes. The ASM 5500 / 700 and / 900 steppers make this double exposure possible. The study of the process window versus the distance between the two focal planes (DF ) shows that the multiple focal planes technique generates proximity effects namely increases the difference between dense holes Critical Dimension (CD) and isolated one for the same parameters (energy, focus and DF ). We study the evolution of these proximity effects for KrF lithography and propose solutions to minimise them.

3D Mask modeling with Oblique incidence and Mask Corner rounding effects for the 32nm node

The perpetual shrinking in critical dimensions in semiconductor devices is driving the need for increased resolution in optical lithography. Increasing NA to gain resolution also increases Optical Proximity Correction (OPC) model complexity. Some optical effects which have been completely neglected in OPC modeling become important. Over the past few years, off-axis illumination has been widely used to improve the imaging process. OPC models which utilize such illumination still use the thin film mask approximation (Kirchhoff approach), during optical model generation, which utilizes a normal incidence. However, simulating a three dimensional mask near-field using an off-axis illumination requires OPC models to introduce oblique incidence. In addition, the use of higher NA systems introduces high obliquity field components that can no longer be assimilated as normal incident waves. The introduction of oblique incidence requires other effects, such as corner rounding of mask features, to be considered, that are seldom taken into account in OPC modeling. In this paper, the effects of oblique incidence and corner rounding of mask features on resist contours of 2D structures (i.e. line-ends and corners) are studied. Rigorous electromagnetic simulations are performed to investigate the scattering properties of various lithographic 32nm node mask structures. Simulations are conducted using a three dimensional phase shift mask topology and an off-axis illumination at high NA. Aerial images are calculated and compared with those obtained from a classical normal incidence illumination. The benefits of using an oblique incidence to improve hot-spot prediction will be discussed.

Critical failure ORC: application to the 90-nm and 65-nm nodes

In this paper, we present a new technique (Critical Failure ORC or CF-ORC) to check the robustness of the structures created by OPC through the process window. The full methodology is explained and tested on a full chip at the 90- nm node. Improvements compared to standard ORC/MRC techniques will be presented on complex geometries. Finally, examples of concrete failure predictions are given and compared to experimental results.

Three-dimensional mask effects and source polarization impact on OPC model accuracy and process window

As semiconductor technology moves toward and beyond the 65 nm lithography node, the importance of Optical Proximity Correction (OPC) models grows due to the lithographers need to ensure high fidelity in the mask- to-silicon transfer. This, in turn, causes OPC model complexity to increase as NA increases and minimum feature size on the mask decreases. Subtle effects, that were considered insignificant, can no longer be ignored. Depending on the imaging system, three dimensional mask effects need to be included in OPC modeling. These effects can be used to improve model accuracy and to better predict the final process window. In this paper, the effects of 3D mask topology on process window are studied using several 45 nm node mask structure types. Simulations are conducted with and without a polarized illumination source. The benefits of using an advanced model algorithm, that comprehends 3D mask effects, will be discussed. To quantify the potential impact of this methodology, relative to current best known practices, all results are compared to those obtained from a model using a conventional thin film mask.

Correction of long-range effects applied to the 65-nm node

Specifications for CD control on current technology nodes have become very tight, especially for the gate level. Therefore all systematic errors during the patterning process should be corrected. For a long time, CD variations induced by any change in the local periodicity have been successfully addressed through model or/and rule based corrections. However, if long-range effects (stray light, etch, and mask writing process...) are often monitored, they are seldom taken into account in OPC flows. For the purpose of our study, a test mask has been designed to measure these latter effects separating the contributions of three different process steps (mask writing, exposure and etch). The resulting induced CD errors for several patterns are compared to the allowed error budget. Then, a methodology, usable in standard OPC flows, is proposed to calculate the required correction for any feature in any layout. The accuracy of the method will be demonstrated through experimental results.

65nm OPC and design optimization by using simple electrical transistor simulation

In the context of 65nm logic technology where gate CD control budget requirements are below 5nm, it is mandatory to properly quantify the impact of the 2D effects on the electrical behavior of the transistor [1,2]. This study uses the following sequence to estimate the impact on transistor performance: 1) A lithographic simulation is performed after OPC (Optical Proximity Correction) of active and poly using a calibrated model at best conditions. Some extrapolation of this model can also be used to assess marginalities due to process window (focus, dose, mask errors, and overlay). In our case study, we mainly checked the poly to active misalignment effects. 2) Electrical behavior of the transistor (Ion, Ioff, Vt) is calculated based on a derivative spice model using the simulated image of the gate as an input. In most of the cases Ion analysis, rather than Vt or leakage, gives sufficient information for patterning optimization. We have demonstrated the benefit of this approach with two different examples: -design rule trade-off : we estimated the impact with and without misalignment of critical rules like poly corner to active distance, active corner to poly distance or minimum space between small transistor and big transistor. -Library standard cell debugging: we applied this methodology to the most critical one hundred transistors of our standard cell libraries and calculate Ion behavior with and without misalignment between active and poly. We compared two scanner illumination modes and two OPC versions based on the behavior of the one hundred transistors. We were able to see the benefits of one illumination, and also the improvement in the OPC maturity.

Gate imaging for 0.09-μm logic technology: comparison of single exposure with assist bars and the CODE approach x

xIn order to address some specific issues related to gate level printing of the 0.09μm logic process, the following mask and illumination solutions have been evaluated. Annular and Quasar illumination using binary mask with assist feature and the CODE (Complementary Double Exposure) technique. Two different linewidths have been targeted after lithography: 100nm and 80nm respectively for lowpower and high-speed applications. The different solutions have been compared for their printing performance through pitch for Energy Latitude, Depth of Focus and Mask Error Enhancement Factor. The assist bar printability and line-end control was also determined. For printing the 100nm target, all tested options can be used, with a preference for Quasar illumination for the gain in Depth of Focus and MEEF. For the 80nm target however, only the CODE technique with Quasar give sufficient good results for the critical litho parameters.