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Zengcheng Tian

Mitsubishi

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Publication

Featured researches published by Zengcheng Tian.

Archive | 2002

Semiconductor memory device adaptable to various types of packages

Makoto Suwa; Shinichi Jinbo; Zengcheng Tian; Takeo Okamoto; Kozo Ishida; Hideki Yonetani; Tsutomu Nagasawa; Tadaaki Yamauchi; Junko Matsumoto

Archive | 2004

Halbleiterspeichervorrichtung mit stabil erzeugter interner Spannung

Tadaaki Yamauchi; Junko Matsumoto; Takeo Okamoto; Makoto Suwa; Tetsuichiro Ichiguchi; Hideki Yonetani; Tsutomu Nagasawa; Zengcheng Tian

Archive | 2003

An eine Mehrzahl von Gehäusearten angepasste Halbleiterschaltungsvorrichtung Adapted to a plurality of housing types semiconductor integrated circuit device

Makoto Suwa; Junko Matsumoto; Tadaaki Yamauchi; Takeo Okamoto; Tetsuichiro Ichiguchi; Hideki Yonetani; Tsutomu Nagasawa; Zengcheng Tian

Archive | 2002

Semiconductor device e.g. dynamic RAM has level conversion circuit with output node whose voltage level rises according to rise of external power supply voltage, through capacitive coupling with external power supply node

Tadaaki Yamauchi; Takeo Okamoto; Junko Matsumoto; Zengcheng Tian

Archive | 2002

Semiconductor memory device for voltage generating circuit, has banks with memory cells, and predecoder selecting and deselecting banks according to addresses received from buffer and latch output

Tsutomu Nagasawa; Hideki Yonetani; Kozo Ishida; Shinichi Jinbo; Makoto Suwa; Tadaaki Yamauchi; Junko Matsumoto; Zengcheng Tian; Takeo Okamoto

Archive | 2002

In zwei Systemen mit unterschiedlichen Versorgungsspannungen verwendete Halbleitervorrichtung A semiconductor device used in two systems with different supply voltages

Tetsuichiro Ichiguchi; Tsutomu Nagasawa; Tadaaki Yamauchi; Zengcheng Tian; Makoto Suwa; Junko Matsumoto; Takeo Okamoto; Hideki Yonetani

Archive | 2002

DRAM has bonding pads arranged on east/west band on peripheral region along two opposing sides of DRAM and outermost power supply pads arranged near center of north/south band

Makoto Suwa; Shinichi Jinbo; Zengcheng Tian; Takeo Okamoto; Kozo Ishida; Hideki Yonetani; Tsutomu Nagasawa; Tadaaki Yamauchi; Junko Matsumoto

Archive | 2002

Halbleiterspeichervorrichtung, die eine hochdichte Struktur oder eine hohe Leistung ermöglicht

Tsutomu Nagasawa; Hideki Yonetani; Kozo Ishida; Shinichi Jinbo; Makoto Suwa; Tadaaki Yamauchi; Junko Matsumoto; Zengcheng Tian; Takeo Okamoto

Archive | 2002

A semiconductor memory device, which is switchable to a twin memory cell configuration

Takeo Okamoto; Tetsuichiro Ichiguchi; Hideki Yonetani; Tsutomu Nagasawa; Makoto Suwa; Zengcheng Tian; Tadaaki Yamauchi; Junko Matsumoto

Archive | 2002

Halbleiterspeichervorrichtung, die auf eine Zwillingsspeicherzellen-Konfiguration umschaltbar ist A semiconductor memory device, which is switchable to a twin memory cell configuration

Takeo Okamoto; Tetsuichiro Ichiguchi; Hideki Yonetani; Tsutomu Nagasawa; Makoto Suwa; Zengcheng Tian; Tadaaki Yamauchi; Junko Matsumoto

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Collaboration

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Junko Matsumoto

Mitsubishi

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Tadaaki Yamauchi

Mitsubishi

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Takeo Okamoto

Mitsubishi

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Hideki Yonetani

Renesas Electronics

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Makoto Suwa

Mitsubishi

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Tsutomu Nagasawa

Renesas Electronics

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Tetsuichiro Ichiguchi

Mitsubishi

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Kozo Ishida

Mitsubishi Electric

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Shinichi Jinbo

Mitsubishi

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