Zhuxian Xu

Evaluation of 600 V cascode GaN HEMT in device characterization and all-GaN-based LLC resonant converter

In recent years, Si power MOSFET is approaching its performance limits, and Gallium Nitride (GaN) HEMT is getting mature. This paper evaluates the 600 V cascode GaN HEMT performance, and compares it with the state-of-the-art Si CoolMOS in LLC resonant converter. First, the static characterization of 600 V cascode GaN HEMT is described in different temperatures. The switching performance is tested by a double pulse tester to provide the turn-off loss reference to the design of LLC resonant converter. Second, a 400 V-12 V/300 W/1 MHz all-GaN-based converter with the 600 V cascode GaN HEMT is compared with a Si-based converter with the 600 V Si CoolMOS. The device output capacitance is a key factor in the design and loss analysis of LLC resonant converter. The design results show that the total GaN device loss of the all-GaN-based converter can be improved by 42% compared with the total Si device loss. Finally, both 400 V-12 V/300 W/1 MHz Si-based and GaN-based LLC resonant converter prototypes are tested and compared with waveforms and efficiency curves.

Investigation of Si IGBT Operation at 200

In order to satisfy the high-density requirement and harsh thermal conditions while reducing cost in future electric and hybrid electric vehicles (HEV), a systematic study of a 1200-V trench-gate field-stop Si insulated gate bipolar transistor (IGBT) operating up to 200°C is performed to determine its feasibility, issues, and application guideline. The device forward conduction characteristics, leakage current, and switching performance are evaluated at various temperatures. Based on the device characterization, the impact of the increased junction temperature on a traction drive converter loss and thermal management is analyzed. It is shown that by extending the device junction temperature to 200°C, the additional 65°C coolant loop can be eliminated without compromising power density and thermal management design. Furthermore, the possible failure mechanisms including latching, short circuit fault, and avalanche capability are tested at elevated temperatures. The criteria considering thermal stability, thermal management, short circuit capability, and avalanche capability are given at 200°C to ensure the safe and reliable operation of Si IGBTs.

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A Si insulated-gate bipolar transistor (IGBT) phase-leg module is developed for operating at 200°C in hybrid electric vehicle applications utilizing the high temperature packaging technologies and appropriate thermal management. The static and switching electrical characteristics of the fabricated power module are tested at various temperatures, showing that the module can operate reliably with increased but acceptable losses at 200°C. The criterion on thermal performance is given to prevent thermal runaway caused by fast increase of the leakage current during a high temperature operation. Afterward, the thermal management system is designed to meet the criterion, the performance of which is evaluated with experiment. Furthermore, two temperature-sensitive electrical parameters, on-state voltage drop and the switching time, are employed for thermal impedance characterization and the junction temperature measurement during converter operation, respectively. Finally, a 10-kW buck converter prototype composed of the module assembly is built and operated at the junction temperature up to 200°C. The experimental results demonstrate the feasibility of operating Si device-based converters continuously at 200°C.

C for Traction Applications

In this paper, a method is proposed to measure the junction temperatures of IGBT discrete devices and modules using short circuit current. Experimental results show that the short circuit current has good sensitivity, linearity and selectivity, which is suitable to be used as temperature sensitive electrical parameters (TSEP). Test circuit and hardware design are proposed for junction temperature measurement in single phase and three phase converters. By connecting a temperature measurement unit to the converter and giving a short circuit pulse, the IGBT junction temperature can be measured.

Development of Si IGBT Phase-Leg Modules for Operation at 200 °C in Hybrid Electric Vehicle Applications

In order to satisfy the high density requirement and harsh thermal conditions in future hybrid vehicles, a systematic study of Si IGBT operating at 200 °C is performed to determine its feasibility, issues and application guideline. First, the device forward conduction characteristics, leakage current, and switching performance at various temperatures are evaluated through both analytical and lab evaluation. Based on the device characterization, the loss and thermal study is then performed, which provides the guideline for packaging and cooling design. Finally, the possible failure mechanisms at high temperatures including latching and short circuit fault have been tested to ensure the safe and reliable operation of Si IGBTs.

Junction temperature measurement of IGBTs using short circuit current

This paper investigates the short-circuit capability and the failure mechanisms of Si trench gate field-stop IGBT under high temperature operation conditions through experiments. First, the test circuits are proposed for IGBT short circuit capability evaluation in different types of short circuit conditions. A hardware setup is built accordingly, and used to evaluate experimentally the IGBT short circuit failures caused by thermal destruction, thermal runaway and latch-up at both 25°C and 200°C. The critical short circuit time is given for high temperature operation under different short circuit conditions. The experimental results show that although the critical short circuit time is reduced at 200°C operation, it is still adequate for the protection circuit to shut down the devices safely. The Si trench gate field-stop IGBT exhibits good short circuit ruggedness at 200°C operation.

Investigation of Si IGBT operation at 200 °C for traction application

An overlap time for two commutating switches is necessary to prevent current interruption in a three-phase buck rectifier, but it may cause input current distortion. In this paper, a modified pulse-based compensation method is proposed to compensate for the overlap time. In addition to the traditional method which places the overlap time based on the voltage polarity, this new method first minimizes the overlap time to reduce its effect and then compensates the pulse width according to the sampled voltage and current. It is verified by experiments that the proposed method has better performance than the traditional method, especially when the line-to-line voltage crosses zero. Another distortion comes from the irregular pulse distribution when two sectors change in a 12-sector space vector PWM. This paper proposes two compensation methods for that scenario as well, compensating the duty cycle and increasing switching frequency near the boundaries of two sectors. It is shown through experiments that both methods can reduce the input current distortion in the buck rectifier.

Experimental investigation of Si IGBT short circuit capability at 200°C

This paper investigates the fast switching characteristics and high temperature performance of the emerging 600 V GaN high-electron-mobility transistor (HEMT) for high efficiency / high temperature applications. First, the inherent switching performance of the GaN HEMT is demonstrated in the double pulse test. The GaN HEMT exhibits superior switching capability, with a di/dt reaching 9.6 A/ns and dv/dt reaching 140 V/ns. Then, the limitations of the fast switching capability by the device packaging and application circuit are analyzed. The interference between the current and gate through common source inductance limits the inherent switching speed. Packaging and circuit layout with small parasitics is critical in achieving fast switching. Finally, the high temperature static and switching characteristics up to 200 °C are also tested and given. The switching performance of the device is temperature insensitive.

Compensation of input current distortion in three-phase buck rectifiers

This paper presents a unified control method for the combined permanent magnet generator (PMG) and active rectifier that can be used in autonomous power systems such as more-electric aircraft requiring high power density and efficiency. With the proposed control, the system can function well without additional boost inductors and rotor position sensors. The design procedure for the control is presented, including current loops, a voltage loop, and a rotor position estimator loop. Simulation and experimental results show that both the dc-link voltage and the reactive power could be controlled effectively. A system efficiency optimization technique is proposed by selecting the permanent magnet flux linkage and determining the operating points at various load and speed conditions. The power density and efficiency of the PMG and active rectifier system are improved with the unified control.

Investigation of 600 V GaN HEMTs for high efficiency and high temperature applications

This paper presents the paralleling operation of three-phase current-source rectifiers (CSRs) as the front-end power conversion stage of data center power supply systems based on 400-Vdc power delivery architecture, which has been proven to have higher efficiency than traditional ac architectures. A control algorithm of paralleled three-phase CSRs is introduced to achieve balanced outputs and individual rectifier module hot swap, which are required by power supply systems. By using silicon carbide (SiC) power semiconductors, SiC MOSFETs, and Schottky diodes, the power losses of the front-end stage are reduced, and the power supply system efficiency can be further increased. The prototype of a 19-kW front-end rectifier to convert 480 Vac,rms to 400 Vdc, based on three paralleled three-phase CSRs, is developed. Each CSR is an all-SiC converter and designed for high efficiency, and the front-end stage full-load efficiency is greater than 98% from experimental tests. The balanced outputs and individual converter hot swap are realized in the hardware prototype too.