A. Monroy

A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters

A 200 mm 0.35 /spl mu/m silicon-germanium heterojunction bipolar transistor (SiGe HBT) technology involving epitaxially-aligned polysilicon emitters is described. The devices are shown to combine the high speed performances typical for poly-Si emitter SiGe base devices (f/sub max/ up to 70 GHz) and the low 1/f noise properties of monocrystalline emitter structures (noise figure-of-merit KB as low as 7.2/spl times/10/sup -10/ /spl mu/m/sup 2/). Statistical current gain data are used to demonstrate the manufacturability of this innovative SiGe HBT technology.

High performance 0.25 /spl mu/m SiGe and SiGe:C HBTs using non selective epitaxy

A robust 0.25 /spl mu/m double-poly SiGe HBT structure using non selective epitaxy has been developed. The device features 70/90 GHz f/sub T//f/sub max/ with pure SiGe base in 0.25 /spl mu/m BiCMOS technology. Performances up to 120/100 GHz f/sub T//f/sub max/ are demonstrated for SiGe:C base transistors.

A high performance low complexity SiGe HBT for BiCMOS integration

A low complexity 0.35 /spl mu/m SiGe HBT technology, using a quasi self-aligned emitter/base structure on a non-selective Si/SiGe epitaxial base, is described. Excellent high frequency performances (f/sub max/ up to 71 GHz) are obtained, opening the way to a highly manufacturable SiGe BiCMOS technology.

LDMOSFET and SiGe:C HBT integrated in a 0.25 /spl mu/m BiCMOS technology for RF-PA applications

An optimized LDMOSFET and a SiGe:C HBT for PA design, integrated in a BiCMOS technology, are described in this article. Each device of interest, for PA applications, is highlighted via its electrical performance - static, small and large signal.

Architecture optimization of an N-channel LDMOS device dedicated to RF-power application

The improvement of the dynamic performances of a RF LDMOS power amplifier (PA) is presented via the investigation of two device architectures differently optimized: LDMOSo1 and LDMOSo2. The diminution of the capacitance Cds was achieved on LDMOSo1. The reduction of key parameters such as the gate resistance Rg, and the capacitance Cgd was obtained on LDMOSo2. Both optimized architectures could be combined to gain on dynamic performances and complete the LDMOSFET optimization.

100GHz SiGe:C HBTs using non selective base epitaxy

We report the fabrication and electrical characterization of high performance 0.25μm SiGe HBTs incorporating a carbon-doped base grown using non selective epitaxy. A transit frequency fT of 97GHz and a maximum oscillation frequency fmax of 94GHz have been obtained together with well balanced static parameters. These are the highest frequency performances reported to date for non selective epitaxy SiGe HBTs, including carbon-doped

A 54 GHz f/sub max/ implanted base 0.35 /spl mu/m single-polysilicon bipolar technology

We report the fabrication of high performance single-polysilicon npn bipolar transistors using a low cost 200 mm 0.35 /spl mu/m bipolar technology. The devices feature record cut-off frequency and maximum oscillation frequency of 35 GHz and 54 GHz respectively, comparable to state-of-the-art results from more complex double-polysilicon bipolar processes.

Comparison of two types of lateral DMOSFET optimized for RF power applications

Integration of RF power amplifier in silicon technology is a new challenge. RF lateral DMOS is one of the main candidates to achieve this objective. In this paper, the integration and optimization of an alternative RF N-type lateral DMOSFET in an advanced 0.25/spl mu/m RF BiCMOS technology are presented. The main optimization steps on DC and RF parameters are described. Linear characteristics and dynamic performances achieved are equivalent to the standard LDMOS architecture.

A novel method for base and emitter resistance extraction in bipolar junction transistors from static and low frequency noise measurements

A novel method of extraction of emitter and base resistances of bipolar junction transistors (BJTs) involving both static characteristics and low frequency noise data is proposed and tested on quasi-self-aligned BJTs. The method requires no special test structures and applies to transistors working in the normal operation regime. It may be therefore readily applied to test procedures for various types of BJTs.

A 70-GHz-fT double-polysilicon SiGe HBT using a non selective epitaxial growth

This paper describes a high performance heterojunction bipolar transistor using a low complexity double polysilicon architecture. Non selective Si/SiGe epitaxy was selected for the base formation, allowing higher manufacturability than for a selective process. Low spread in statistical results confirms very good control and reproducibility of the Si/SiGe stack deposition and epitaxially aligned emitter fabrication. Static and high frequency measurements analysis shows excellent set of electrical parameters: 70-GHz-f T and 90-GHz-f max have been measured for 2.5 BV CE0 devices.