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Dive into the research topics where A.Y. Borisov is active.

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Featured researches published by A.Y. Borisov.


international siberian conference on control and communications | 2015

Automated test complex for operational amplifier ICS parametric and functioning monitoring

A.V. Demidova; A.Y. Borisov; L.N. Kessarinskiy; D. V. Boychenko

The article discusses automated test complex based on the PXI devices basis for monitoring parameters and functioning of integrated opamp during radiation experiments. Need of measurements and input signals high accuracy support is specified.


international siberian conference on control and communications | 2015

Automated test system for parametric control of voltage supervisors

N.E. Aristova; A.S. Tararaksin; L.N. Kessarinskiy; A.Y. Borisov; A.Y. Nikiforov

This article describes the automated test facility system for parametric control of voltage supervisors before, during and after irradiation in radiation tests based on the National instruments PXI family equipment.


international siberian conference on control and communications | 2015

Automatic test complex for parametric control of power NMOS and PMOS transistors

N.E. Aristova; A.Y. Borisov; A.S. Tararaksin; L.N. Kessarinskiy; Andrey V. Yanenko

This article describes the automated test complex for parametric control of power n- and p-MOSFET transistors before, during and after irradiation tests based on the National instruments PXI standard equipment.


international siberian conference on control and communications | 2015

Automated test complex for parametric and functional control of voltage regulators and DC-DC converters

M.P. Belova; D.V. Pechenkina; A.Y. Borisov; L.N. Kessarinskiy; D. V. Boychenko

This article describes the process of creating an automated test complex for simultaneous parameters control of several voltage regulators and DC/DC-converters under irradiation based on the National Instruments PXI family equipment.


Russian Microelectronics | 2015

Electric regime influence on the DC-DC converters’s hardness to single event transients

L.N. Kessarinskiy; A.Y. Borisov; D. V. Boychenko; A. O. Akhmetov

The influence of the electric operating regime of hybrid pulse DC-DC converters on the number of single event transient and, consequently, the sensetive parameters is analyzed. The predicted dependence of the single-effect characteristic in hybrid stabilizers on the electric regime in general and the feedback performance in particular is confirmed experimentally. The recommendations for carrying out the certification tests for the sensetive of hybrid voltage stabilizers to single effects are outlined.


international siberian conference on control and communications | 2016

Automated test complex for parametric and functional control of voltage-to-frequency converter

A.Y. Borisov; L.N. Kessarinskiy

This paper describes a custom developed automated test complex for linear voltage-to-frequency converter based on PXI-standard equipment managed by LabView software. The main parts of block diagram are described in detail. The complex was successfully applied in test experiments.


radiation effects data workshop | 2015

Electrical Mode Influence on TID Sensitivity of Integrated and Hybrid DC-DC Converters

L.N. Kessarinskiy; D. V. Boychenko; A.Y. Borisov

Total dose experimental results for different types of voltage regulators is presented and analyzed. The worst irradiation cases are revealed.


Microelectronics Reliability | 2015

DC–DC's total ionizing dose hardness decrease in passive reserve mode

L.N. Kessarinskiy; A.Y. Borisov; D. V. Boychenko; A.Y. Nikiforov

Abstract The usual and effective way to increase on-board electronics reliability and general radiation hardness is the usage of “sleeping” (shutdown) mode and “passive” reserve of vulnerable blocks and elements. This work presents the comparative radiation test results of hybrid and integrated DC–DC converters TIDs sensitivity in active, sleeping and passive modes. The obtained experimental data demonstrates that TID hardness of bipolar, BiCMOS and hybrid DC–DCs in the unbiased condition is at least not higher than their normally biased mode. Moreover some of bipolar integrated DC–DCs have relatively higher radiation-induced degradation while unbiased, so their “passive” (so-called “cold”) reserve mode may be the worst case mode for TIDs hardness level.


european conference on radiation and its effects on components and systems | 2015

Different Chips at Identical Marking on the Example of OP1177

Alexandra V. Demidova; Alexander A. Pechenkin; A.Y. Borisov; L.N. Kessarinskiy; Andrey V. Yanenko; D. V. Boychenko; A.Y. Nikiforov

Four parts of opamp OP1177ARZ manufactured by Analog Devices have been tested. The chips have been compared visually and with specialized software. Forms of ionization response in three checkpoints have been registered, and maps of response amplitudes on the crystal surface have been constructed. It has been determined , that crystals samples are various in spite of identical crystals marking. So TID behavior of various samples has been observed.


international conference on microelectronics | 2017

Analog ASIC TID behavior in a temperature range

A.Y. Borisov; L.N. Kessarinskiy; M.M. Vanzha; M.P. Belova; Yu. M. Moskovskaya; D. V. Boychenko; A.Y. Nikiforov; V.V. Enns

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L.N. Kessarinskiy

National Research Nuclear University MEPhI

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D. V. Boychenko

National Research Nuclear University MEPhI

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A.Y. Nikiforov

National Research Nuclear University MEPhI

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M.P. Belova

National Research Nuclear University MEPhI

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A.S. Tararaksin

National Research Nuclear University MEPhI

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Andrey V. Yanenko

National Research Nuclear University MEPhI

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N.E. Aristova

National Research Nuclear University MEPhI

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A. O. Akhmetov

National Research Nuclear University MEPhI

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A.V. Demidova

National Research Nuclear University MEPhI

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