D. V. Boychenko

System on module total ionizing dose distribution modeling

The paper presents total ionizing dose (TID) distribution due to trapped electrons and protons at the system on module (SOM) surface. TID calculation was made in 3D_SPACE software (Specialized Electronic Systems). The main goal of this paper is a more precise definition of the radiation hardness requirements for space electronics. A huge TID level dispersion for different ICs in SOM is demonstrated. Basic Al sphere approach for TID spacecraft requirements calculations is shown to provide overestimated conservative results.

An analysis of the radiation behavior of pulse voltage stabilizers

A typical structure of modern hybrid microcircuits of pulse voltage stabilizers (PVSs) is analyzed. Experiential studies of dose and single-event local ionization effects in basic units of modern pulse voltage stabilizers are performed. The model of pulse voltage stabilizers for analyzing single-event effects is proposed, and its experimental verification is fulfilled. The most radiation-sensitive basic units of pulse voltage stabilizers are revealed. Recommendations for increasing their radiation resistance are given.

Automated test complex for operational amplifier ICS parametric and functioning monitoring

The article discusses automated test complex based on the PXI devices basis for monitoring parameters and functioning of integrated opamp during radiation experiments. Need of measurements and input signals high accuracy support is specified.

The New Gamma Irradiation Facility at the National Research Nuclear University MEPhI

The new gamma irradiation facility recently installed at the National Research Nuclear University MEPhI (Moscow, Russia) is presented.

The automated test system for parametric and functional control of the modern transceiver IC's

The article describes the automated complex of parametric and functional control of the wide range of industrial transceivers ICs by using PXI family of National Instruments equipment. The capabilities of the designed system are observed as well as the software.

Rational methodological approach to evaluation of dose resistance of CMOS microcircuits with respect to low intensity effects

A rational methodological approach to the evaluation of the total dose hardness of CMOS microcircuits with respect to low dose rate effects supported by the results of the simulation analysis and experimental studies of a wide range of products is presented. This approach makes it possible to choose the necessary and sufficient amount of radiation researches that provide accurate and informative engineering evaluation of radiation hardness of CMOS microcircuits for use in space hardware.

Temperature Dependence of MCU Sensitivity in 65 nm CMOS SRAM

The temperature dependence of single-event upset multiplicity in 65 nm CMOS SRAM was investigated in this paper. Experimental results show significant increase of upset multiplicity over a temperature range of 300 to 400 K. Main physical mechanisms leading to the increase of the multiplicity of upsets at elevated temperatures were studied using three-dimensional (3-D) device simulations. A major role of upset voltage decrease and temperature dependence of the parasitic bipolar effect was established. Simulation results can be used for maximal upset multiplicity estimation.

Automated test complex for parametric and functional control of voltage regulators and DC-DC converters

This article describes the process of creating an automated test complex for simultaneous parameters control of several voltage regulators and DC/DC-converters under irradiation based on the National Instruments PXI family equipment.

The influence of the electrical conditions on total dose behavior of the analog switches

The influence of the electrical conditions on analog switches total dose behavior is investigated. The major difference in analog switches radiation hardness due to irradiation and measurement conditions is confirmed.

Compendium of TID Comparative Results under X-Ray, Gamma and LINAC Irradiation

Compendium of TID comparative results under X-ray, Gamma and LINAC irradiation is presented. The new joint method of X-ray and gamma irradiation employment for TID investigations is proposed. Experiment results successfully confirm the validity of the proposed TID testing approach.