Andrey V. Yanenko

Local laser irradiation technique for SEE testing of ICs

The results of local laser simulation for estimation of SEE parameters are presented. Simulation method is based on the local laser irradiation of VLSI by measuring response in power supply circuits and determining laser threshold energy of SEE.

Single event latchup threshold estimation based on laser dose rate test results

Single event latchup is one of the dominant CMOS IC failure effects in the space environment. Latchup comparative experimental and software simulation research were performed at various laser wavelengths, pulse durations and spot sizes. Single event to dose rate latchup correlation was found that provides the possibility of SEL threshold energy prediction based on laser dose rate test results.

Evaluation of Moderately Focused Laser Irradiation as a Method for Simulating Single-Event Effects

A numerical and a physical simulation are reported of single-event upsets and single-event latchups by laser irradiation with spot diameters ranging from 5 to 50 μm. It is shown that the method can be useful for estimating the threshold values of linear energy transfer if the laser spot covers a number of sensitive regions.

Automatic test complex for parametric control of power NMOS and PMOS transistors

This article describes the automated test complex for parametric control of power n- and p-MOSFET transistors before, during and after irradiation tests based on the National instruments PXI standard equipment.

Study of SEL and SEU in SRAM Using Different Laser Techniques

Single event upset (SEU) and single event latchup (SEL) laser testing results of SRAM CY62256 using both focused and local laser irradiation techniques are presented. Variable laser wavelength was used for SEU and SEL threshold linear energy transfer (LET) estimation. The backside laser irradiation technique was also applied. Laser testing results were compared to heavy ion testing ones.

Compendium of SEE comparative results under ion and laser irradiation

Compendium of SEU, SEL, SET, SEB and SEGR comparative results under ion irradiation and focused laser beam are presented. The possible sources of discrepancies between ion and laser results and the ways of data correction are discussed.

Femtosecond Laser Simulation Facility for SEE IC Testing

The new SEE laser simulation facility based on femtosecond laser source with tunable pulse duration is presented, and its most important features are discussed. The influence of laser pulse duration on simulation results is observed.

Fault-Tolerant SOI Microprocessor for Space Applications

The design and experimental results are presented for the fault-tolerant 0.35 ìm SOI CMOS microprocessor. DICE-like cells are shown to be vulnerable to SEU during “read” and “write” modes.

Experimental Investigation of SELs in SiT8003 MEMS-Oscillators

SEEs in SiT8003 MEMS-oscillator were investigated. Irradiation was provided with ion-cyclotron and picosecond focused laser. SEL, SEU were observed. Threshold LET, saturation cross-section were estimated. High SEE sensitivity of SiT8003 is shown.

Simulating Single-Event Effects Associated with High-Energy Neutrons for Different VLSI Technologies

A computer and a physical simulation are conducted of single-event effects associated with neutrons or protons of different energy for test VLSI circuits realized by modern technologies with a minimum feature size of 0.5 or 0.35 μm. The test specimens are found to be fairly susceptible to these effects. In particular, neutrons with an energy of order 1 MeV are shown to mainly cause single-event upsets with a threshold energy of about 1 MeV and a sensitive volume of order 1 μm3. As the minimum feature size is reduced, the threshold is predicted to decrease sharply due to a growing amplifying effect of the parasitic bipolar transistor.