A.Y. Nikiforov

System on module total ionizing dose distribution modeling

The paper presents total ionizing dose (TID) distribution due to trapped electrons and protons at the system on module (SOM) surface. TID calculation was made in 3D_SPACE software (Specialized Electronic Systems). The main goal of this paper is a more precise definition of the radiation hardness requirements for space electronics. A huge TID level dispersion for different ICs in SOM is demonstrated. Basic Al sphere approach for TID spacecraft requirements calculations is shown to provide overestimated conservative results.

Single event latchup threshold estimation based on laser dose rate test results

Single event latchup is one of the dominant CMOS IC failure effects in the space environment. Latchup comparative experimental and software simulation research were performed at various laser wavelengths, pulse durations and spot sizes. Single event to dose rate latchup correlation was found that provides the possibility of SEL threshold energy prediction based on laser dose rate test results.

TID behavior of complex multifunctional VLSI devices

Total ionizing dose (TID) radiation tests of complex multifunctional Very-large-scale integration (VLSI) integrated circuits (ICs) rise up some particularities as compared to conventional “simple” ICs. The main difficulty is to organize informative and quick functional tests directly under irradiation. Functional tests approach specified for complex multifunctional VLSI devices is presented and the basic radiation test procedure is discussed in application to some typical examples.

Automatic control system for memory chips performance in a radiation experiment

The paper analyzes the effectiveness of test algorithms of different duration during the functional control of static random access memory (SRAM) during the exposure to total ionizin dose (TID). The results of experimental research SRAM chips using an automated system based on the equipment PXI company National Instruments, justifying the use of the test algorithms such as “MARCH” (long-10N).

Flash memory cells data loss caused by total ionizing dose and heavy ions

The paper provides experimental results of flash memory loss data investigation. Possible mechanisms of charge loss from storage element are reviewed. We provide some guidelines for flash memory evaluation to space application.

Methods for the Prediction of Total-Dose Effects on Modern Integrated Semiconductor Devices in Space: A Review

Ionizing-radiation effects on space microelectronics are addressed. Major approaches to the radiation-hardness evaluation of IC components in terms of total-dose effects at low dose rates are reviewed. The main mechanisms and kinetic models of radiation degradation are discussed from the standpoint of the prediction of IC radiation response.

Laser Testing Methodology for Diagnosing Diverse Soft Errors in a Nanoscale SRAM-Based FPGA

In this paper, we propose a method that combines dedicated test designs, readback and bitstream comparisons to investigate soft errors in a nanoscale SRAM-based FPGA under photoelectric stimulation. Static test is performed to analyze the SEU dependency to voltage supply. Static cross-section and threshold energy are presented. Dynamic test is accomplished by using a set of designs in order to diagnose errors from SET in the logic clock tree, SEU in embedded soft-core processor and in the reconfigurable ICAP interface. A picosecond laser is used in the experiments.

An analysis of the radiation behavior of pulse voltage stabilizers

A typical structure of modern hybrid microcircuits of pulse voltage stabilizers (PVSs) is analyzed. Experiential studies of dose and single-event local ionization effects in basic units of modern pulse voltage stabilizers are performed. The model of pulse voltage stabilizers for analyzing single-event effects is proposed, and its experimental verification is fulfilled. The most radiation-sensitive basic units of pulse voltage stabilizers are revealed. Recommendations for increasing their radiation resistance are given.

Integrating analog-to-digital converter radiation hardness test technique and results

The integrating ADC CMOS IC radiation hardness tests were performed. Dose rate, total dose and structural damage test techniques and results are presented and analyzed. It was found that low radiation hardness is inherent to an integrating ADC due to its operation principles.

The New Gamma Irradiation Facility at the National Research Nuclear University MEPhI

The new gamma irradiation facility recently installed at the National Research Nuclear University MEPhI (Moscow, Russia) is presented.