Aaron Yip | Researchain

Archive Network Publication Hotspot Collaboration

Network

Latest external collaboration on country level. Dive into details by clicking on the dots.

Explore More

Hotspot

Dive into the research topics where Aaron Yip is active.

Explore More

Publication

Featured researches published by Aaron Yip.

international solid-state circuits conference | 2016

7.7 A 768Gb 3b/cell 3D-floating-gate NAND flash memory

Tomoharu Tanaka; Mark A. Helm; Tommaso Vali; Ramin Ghodsi; Koichi Kawai; Jae-Kwan Park; Shigekazu Yamada; Feng Pan; Yuichi Einaga; Ali Ghalam; Toru Tanzawa; Jason Guo; Takaaki Ichikawa; Erwin Yu; Satoru Tamada; Tetsuji Manabe; Jiro Kishimoto; Yoko Oikawa; Yasuhiro Takashima; Hidehiko Kuge; Midori Morooka; Ali Mohammadzadeh; Jong Kang; Jeff Tsai; Emanuele Sirizotti; Eric N. Lee; Luyen Vu; Yuxing Liu; Hoon Choi; Kwonsu Cheon

A planar floating-gate NAND technology has previously realized a 0.87Gb/mm2 memory density using 3b/cell [1] and achieved a minimum feature size for 16nm [2]. However, the development of planar NAND flash is expected to reach the scaling limit in a few technology generations. To break though this limit, a significant shift to 3D NAND flash has begun and several types of 3D memory cell structures have been proposed and discussed [3-5]. Recently a 3D V-NAND technology achieved 1.86Gb/mm2 using charge-trap cells and 3b/cell [6]. This paper presents a 3b/cell NAND flash memory utilizing a 3D floating gate (FG) technology that achieves 4.29Gb/mm2.

Archive | 2006