Agajan Suvkhanov

Radiation Characteristics of a 0.11μm Modified Commercial CMOS Process

The authors present radiation data, total ionizing dose and single event effects, on the LSI logic 0.11 μm commercial process and two modified versions of this process. Modified versions include a buried layer to guarantee single event latch up immunity.

Radiation evaluation of a 0.18 μm commercial CMOS process and modified radiation hardened versions of this process

We present radiation data, Total Ionizing Dose and Single Event Effects, on the LSI Logics commercial 0.18 μm process and its radiation hardened version. Test results, are discussed in this paper. No Single Event Latch-up (SEL) was observed up to a LET of 75 MeVcm2/mg for radiation hardened version, while the commercial process was very sensitive to SEL.

X-ray and secondary ion mass spectrometry investigation of activation behavior of self-preamorphized silicon substrate

The junctions for p-type source/drain and extensions for sub-100 nm technology nodes can be formed by using low energy beamline implantation, plasma doping, or elevated source/drain approaches in conjunction with various thermal processing methods. An important objective for sub-100 nm junction engineering is incorporation and activation of desired level of dopant in the junction region. In this article, the interaction between Si preamorphization implantation and boron implantation has been investigated by using secondary ion mass spectrometry (SIMS), triple crystal x-ray diffraction (XRD), and four point probe measurements. The dopant profile abruptness is found to be a function of boron energy and the Si+ ion dose and energy. Results demonstrate that an increase in Si energy by 10 keV yields ∼100 A shallower and more abrupt boron profiles. Crystallinity of the implanted layer after thermal treatment has been characterized by the triple crystal XRD technique. The XRD rocking curve data correlated well w...