Akshay Agarwal

Losses in polycrystalline silicon waveguides

The losses of polycrystalline silicon (polySi) waveguides clad by SiO2 are measured by the cutback technique. We report losses of 34 dB/cm at a wavelength of 1.55 μm in waveguides fabricated from chemical mechanical polished polySi deposited at 625 °C. These losses are two orders of magnitude lower than reported absorption measurements for polySi. Waveguides fabricated from unpolished polySi deposited at 625 °C exhibit losses of 77 dB/cm. We find good agreement between calculated and measured losses due to surface scattering.

PROGRESS ON THE FABRICATION OF ON-CHIP, INTEGRATED CHALCOGENIDE GLASS (CHG)-BASED SENSORS

In this paper, we review ongoing progress in the development of novel on-chip, low loss planar molecular sensors that address the emerging need in the field of biochemical sensing. Chalcogenide glasses were identified as the material of choice for sensing due to their wide infrared transparency window. We report the details of manufacturing processes used to realize novel high-index-contrast, compact micro-disk resonators. Our findings demonstrate that our device can operate in dual modalities, for detection of the infrared optical absorption of a binding event using cavity enhanced spectroscopy, or sensing refractive index change due to surface molecular binding and extracting micro-structural evolution information via cavity enhanced refractometry.

On-chip mid-infrared gas detection using chalcogenide glass waveguide

We demonstrate an on-chip sensor for room-temperature detection of methane gas using a broadband spiral chalcogenide glass waveguide coupled with off-chip laser and detector. The waveguide is fabricated using UV lithography patterning and lift-off after thermal evaporation. We measure the intensity change due to the presence and concentration of methane gas in the mid-infrared (MIR) range. This work provides an approach for broadband planar MIR gas sensing.

Power and efficiency analysis of a realistic resonant tunneling diode thermoelectric

Low-dimensional systems with sharp features in the density of states have been proposed as a means for improving the efficiency of thermoelectric devices. Quantum dot systems, which offer the sharpest density of states achievable, however, suffer from low power outputs while bulk (3-D) thermoelectrics, while displaying high power outputs, offer very low efficiencies. Here, we analyze the use of a resonant tunneling diode structure that combines the best of both aspects, that is, density of states distortion with a finite bandwidth due to confinement that aids the efficiency and a large number of current carrying transverse modes that enhances the total power output. We show that this device can achieve a high power output (∼0.3 MW∕m2) at efficiencies of ∼40% of the Carnot efficiency due to the contribution from these transverse momentum states at a finite bandwidth of kT∕2. We then provide a detailed analysis of the physics of charge and heat transport with insights on parasitic currents that reduce the e...

Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge.

CMOS platforms operating at the telecommunications wavelength either reside within the highly dissipative two-photon regime in silicon-based optical devices, or possess small nonlinearities. Bandgap engineering of non-stoichiometric silicon nitride using state-of-the-art fabrication techniques has led to our development of USRN (ultra-silicon-rich nitride) in the form of Si7N3, that possesses a high Kerr nonlinearity (2.8 × 10−13 cm2 W−1), an order of magnitude larger than that in stoichiometric silicon nitride. Here we experimentally demonstrate high-gain optical parametric amplification using USRN, which is compositionally tailored such that the 1,550 nm wavelength resides above the two-photon absorption edge, while still possessing large nonlinearities. Optical parametric gain of 42.5 dB, as well as cascaded four-wave mixing with gain down to the third idler is observed and attributed to the high photon efficiency achieved through operating above the two-photon absorption edge, representing one of the largest optical parametric gains to date on a CMOS platform.

On-chip chalcogenide glass waveguide-integrated mid-infrared PbTe detectors

We experimentally demonstrate an on-chip polycrystalline PbTe photoconductive detector integrated with a chalcogenide glass waveguide. The device is monolithically fabricated on silicon, operates at room-temperature, and exhibits a responsivity of 1.0 A/W at wavelengths between 2.1 and 2.5 μm.

Multispectral pixel performance using a one-dimensional photonic crystal design

A photodetector pixel using a photonic crystal structure incorporating photoconductive layers has been realized. The fabricated device exploits mode discrimination and resonant cavity enhancement to provide simultaneous multispectral detection capability, high quantum efficiency, and dramatically suppressed shot noise. Detectivities as high as 2.6×1010 and 2.0×1010cmHz1∕2W−1 at the two preselected wavelengths, 632 and 728nm, were achieved, respectively.

Bias sputtered NbN and superconducting nanowire devices

Superconducting nanowire single photon detectors (SNSPDs) promise to combine near-unity quantum efficiency with >100 megacounts per second rates, picosecond timing jitter, and sensitivity ranging from x-ray to mid-infrared wavelengths. However, this promise is not yet fulfilled, as superior performance in all metrics is yet to be combined into one device. The highest single-pixel detection efficiency and the widest bias windows for saturated quantum efficiency have been achieved in SNSPDs based on amorphous materials, while the lowest timing jitter and highest counting rates were demonstrated in devices made from polycrystalline materials. Broadly speaking, the amorphous superconductors that have been used to make SNSPDs have higher resistivities and lower critical temperature (Tc) values than typical polycrystalline materials. Here, we demonstrate a method of preparing niobium nitride (NbN) that has lower-than-typical superconducting transition temperature and higher-than-typical resistivity. As we will ...

Integrating optics and micro-fluidic channels using femtosecond laser irradiation

The ability to integrate micro-channels for fluid transport with optical elements is attractive for the development of compact and portable chip-based sensors. Femtosecond Laser Direct Writing (FLDW) in transparent materials is a powerful tool for the fabrication of such integrated devices. We demonstrate the use of FLDW to fabricate coupled micro-fluidic channels and optical waveguides towards an integrated sensing device for molecular detection. Waveguides were directly written into the host material and channels were formed by modifying the molecular structure through FLDW followed by wet chemical etching. Multiple host materials including chalcogenide glasses for IR detection are discussed.

Refractive index modifications in Chalcogenide films induced by sub-bandgap near-IR femtosecond pulses

Refractive index modifications of film Ge_0.23Sb_0.07S_0.7 induced by 800 nm femtosecond laser irradiation are studied for laser repetition rates of 1 kHz and 80 MHz. Measurements are taken using an interferometric method and analysis of the transmission spectra.