Nathan Carlie

Fabrication and testing of planar chalcogenide waveguide integrated microfluidic sensor

We have fabricated and tested, to the best of our knowledge, the first microfluidic device monolithically integrated with planar chalcogenide glass waveguides on a silicon substrate. High-quality Ge(23)Sb(7)S(70) glass films have been deposited onto oxide coated silicon wafers using thermal evaporation, and high-index-contrast channel waveguides have been defined using SF(6) plasma etching. Microfluidic channel patterning in photocurable resin (SU8) and channel sealing by a polydimethylsiloxane (PDMS) cover completed the device fabrication. The chalcogenide waveguides yield a transmission loss of 2.3 dB/cm at 1550 nm. We show in this letter that using this device, N-methylaniline can be detected using its well-defined absorption fingerprint of the N-H bond near 1496 nm. Our measurements indicate linear response of the sensor to varying N-methylaniline concentrations. From our experiments, a sensitivity of this sensor down to a N-methylaniline concentration 0.7 vol. % is expected. Given the low-cost fabrication process used, and robust device configuration, our integration scheme provides a promising device platform for chemical sensing applications.

Planar waveguide-coupled, high-index-contrast, high-Q resonators in chalcogenide glass for sensing

High-index-contrast compact microdisk resonators in thermally evaporated As2S3 and Ge17Sb12S71 chalcogenide glass films are designed and fabricated using standard UV lithography and characterized. Our pulley coupler configuration demonstrates coupling of the resonators to monolithically integrated photonic wire waveguides without resorting to demanding fine-line lithography. Microdisk resonators in As2S3 support whispering-gallery-mode with cavity quality factors (Q) exceeding 2 x 10(5), the highest Q value reported in resonator structures in chalcogenide glasses to the best of our knowledge. We have successfully demonstrated a lab-on-a-chip prototype sensor device with the integration of our resonator with planar microfluidic systems. The sensor shows a refractive index sensitivity of 182 nm/RIU (refractive index unit) and a wavelength resolution of 0.1 pm through a resonant peak fit. This corresponds to a refractive index detection limit of 8 x 10(-7) RIU at 1550 nm in wavelength, which could be further improved by shifting the operating wavelength to a region where water absorption is reduced.

Si-CMOS-compatible lift-off fabrication of low-loss planar chalcogenide waveguides

We demonstrate, for the first time to the best of our knowledge, low-loss, Si-CMOS-compatible fabrication of single-mode chalcogenide strip waveguides. As a novel route of chalcogenide glass film patterning, lift-off allows several benefits: leverage with Si-CMOS process compatibility; ability to fabricate single-mode waveguides with core sizes down to submicron range; and reduced sidewall roughness. High-index-contrast Ge(23)Sb(7)S(70) strip waveguides have been fabricated using lift-off with excellent uniformity of loss propagation and the lowest loss figure of reported to date. We also show that small core Ge(23)Sb(7)S(70) rib waveguides can be fabricated via lift-off as well, with loss figures lower than 0.5 dB/cm. Additionally, we find through waveguide modal analysis that although overall transmission loss is low, the predominant source of this loss comes from scattering at the sidewalls.

Integrated chalcogenide waveguide resonators for mid-IR sensing: leveraging material properties to meet fabrication challenges

In this paper, attributes of chalcogenide glass (ChG) based integrated devices are discussed in detail, including origins of optical loss and processing steps used to reduce their contributions to optical component performance. Specifically, efforts to reduce loss and tailor optical characteristics of planar devices utilizing solution-based glass processing and thermal reflow techniques are presented and their results quantified. Post-fabrication trimming techniques based on the intrinsic photosensitivity of the chalcogenide glass are exploited to compensate for fabrication imperfections of ring resonators. Process parameters and implications on enhancement of device fabrication flexibility are presented.

Demonstration of chalcogenide glass racetrack microresonators

We have demonstrated what we believe to be the first chalcogenide glass racetrack microresonator using a complementary metal-oxide semiconductor-compatible lift-off technique with thermally evaporated As(2)S(3) films. The device simultaneously features a small footprint of 0.012 mm x 0.012 mm, a cavity Q (quality factor) of 10,000, and an extinction ratio of 32 dB. These resonators exhibit a very high sensitivity to refractive index changes with a demonstrated detection capability of Dn(As(2)S(3)=(4.5 x 10(-6)+/-10%) refractive index unit. The resonators were applied to derive a photorefractive response of As(2)S(3) to lambda=550 nm light. The resonator devices are a versatile platform for both sensing and glass material property investigation.

Optical loss reduction in high-index-contrast chalcogenide glass waveguides via thermal reflow

A thermal reflow technique is applied to high-index-contrast, sub-micron waveguides in As(2)S(3) chalcogenide glass to reduce the sidewall roughness and associated optical scattering loss. We show that the reflow process effectively decreases sidewall roughness of chalcogenide glass waveguides. A kinetic model is presented to quantitatively explain the sidewall roughness evolution during thermal reflow. Further, we develop a technique to calculate waveguide optical loss using the roughness evolution model, and predict the ultimate low loss limit in reflowed high-index-contrast glass waveguides. Up to 50% optical loss reduction after reflow treatment is experimentally observed, and the practical loss limiting factors are discussed.

Nonlinear optical properties of glasses in the system Ge/Ga-Sb-S/Se.

We report n2 measurements of selected chalcogenide glasses using a modified Z-scan technique. Measurements were made with picosecond pulses emitted by a 10 Hz Q-switched, mode-locked Nd:YAG laser at 1064 nm under conditions suitable to characterize ultrafast nonlinearities. The nonlinear index increases significantly up to 246 times the n2 for fused silica with an increase of SbS3 units and also very slightly with the replacement of Ge by Ga or S by Se. We have attributed the variation of n2 to the total number of electronic lone pairs and to the position of the absorption band gap, which are induced by the presence of GaS4 units or Se-Se bonds in the glass structure.

PROGRESS ON THE FABRICATION OF ON-CHIP, INTEGRATED CHALCOGENIDE GLASS (CHG)-BASED SENSORS

In this paper, we review ongoing progress in the development of novel on-chip, low loss planar molecular sensors that address the emerging need in the field of biochemical sensing. Chalcogenide glasses were identified as the material of choice for sensing due to their wide infrared transparency window. We report the details of manufacturing processes used to realize novel high-index-contrast, compact micro-disk resonators. Our findings demonstrate that our device can operate in dual modalities, for detection of the infrared optical absorption of a binding event using cavity enhanced spectroscopy, or sensing refractive index change due to surface molecular binding and extracting micro-structural evolution information via cavity enhanced refractometry.

Progress on the Photoresponse of Chalcogenide Glasses and Films to Near-Infrared Femtosecond Laser Irradiation: A Review

This paper reviews ongoing progress in exploring the mechanistic origins of photoinduced structural modification in chalcogenide glasses (ChGs). These findings, reported by groups at the University of Central Florida, Clemson University, and throughout other research programs within the United States and abroad, have examined the relationship between the network modification and other photoresponse of IR glasses upon exposure to near-infrared (NIR) femtosecond laser exposure. Contained is a review on the principles of femtosecond laser writing in glass, the photoinduced phenomena, and a summary of the main models predicting photoinduced material response. We compare the photoresponse of As- and Ge-based films, taken as example, following NIR femtosecond laser irradiation that results in near-surface photoexpansion and an increase or decrease of the refractive index, respectively. This difference in photoresponse has been related to the layered network of the As-based glass that leads to the breaking and formation of bonds during laser exposure as compared to the 3-D network of Ge-based glass that leads only to a modification of the bond arrangements. Last, an explanation of the need to control the photoresponse of ChGs by aging, changing the glass thermal history, adding modifiers, or replacing the anions forming the network is discussed.

Low-loss high-index-contrast planar waveguides with graded-index cladding layers.

We experimentally demonstrate, for the first time, propagation loss reduction via graded-index (GRIN) cladding layers in high-index-contrast (HIC) glass waveguides. We show that scattering loss arising from sidewall roughness can be significantly reduced without compromising the high-index-contrast condition, by inserting thin GRIN cladding layers with refractive indices intermediate between the core and topmost cover of a strip waveguide. Loss as low as 1.5 dB/cm is achieved in small core (1.6 mum x 0.35 mum), high-index-contrast (Deltan = 1.37) arsenic-based sulfide strip waveguides. This GRIN cladding design is generally applicable to HIC waveguide systems such as Si/SiO2.