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Featured researches published by Allen Zhao.


Japanese Journal of Applied Physics | 1999

Plasma Diagnostics: Use and Justification in an Industrial Environment

Peter K. Loewenhardt; Wade Zawalski; Yan Ye; Allen Zhao; Tim R. Webb; Daisuke Tajima; Diana X. Ma

The importance of plasma diagnostics at semiconductor equipment manufacturers has increased steadily over the past decade. The design and procurement of advanced etching tools now require a full host of plasma diagnostics and modeling capability. Examples of these activities at a semiconductor equipment manufacturer will be given, with specifics of significant and useful results. Examples include the development and optimization of an inductive plasma source, trend analysis and hardware effects on ion energy distributions, and mass spectrometry influences on process development. Discussion will focus on plasma diagnostics for in-house development and proliferation in an environment with strong financial justification requirements.


advanced semiconductor manufacturing conference | 1999

Development of copper etch technology for advanced copper interconnects

P. Koch; Yan Ye; Diana Ma; Allen Zhao; Peter Hsieh; Chun Mu; Jenn Chow; S. Sherman

Recent development efforts in copper etch processing show promising results in many areas that have posed significant challenges for this new technology. We report on the etch performance for features down to 0.25 /spl mu/m with aspect ratios greater than 2:1. Copper etch rates of over 5000 /spl Aring//min have been achieved, and corrosion-free post copper etch performance has been demonstrated for periods in excess of two weeks. Electrical and device yield tests were conducted and presented in detail.


international interconnect technology conference | 1998

Development of Cu etch process for advanced Cu interconnects

Yan Ye; Diana Ma; Allen Zhao; Peter Hsieh; Wayne Tu; Xiancan Deng; Gary Chu; Chun Mu; Jenn Chow; Peter K. Moon; Steta Sherman

Recent development efforts in copper etch processing show promising results in many areas that have posed significant challenges for this new technology. We report on etch performance for features down to 0.25 /spl mu/m with aspect ratios greater than 2:1. Copper etch rates greater than 5000 /spl square//min have been achieved, and corrosion-free post Cu etch performance has been demonstrated for periods in excess of 72 hours. Electrical tests were conducted and are presented in detail.


Archive | 1998

Method of etching patterned layers useful as masking during subsequent etching or for damascene structures

Yan Ye; Pavel Ionov; Allen Zhao; Peter Hsieh; Diana Xiaobing Ma; Chun Yan; Jie Yuan


Archive | 1997

RF plasma reactor with hybrid conductor and multi-radius dome ceiling

Gerald Zheyao Yin; Diana Xiaobing Ma; Peter K. Loewenhardt; Philip M. Salzman; Allen Zhao; Hiroji Hanawa


Archive | 1999

Method of cleaning a semiconductor device processing chamber after a copper etch process

Danny Lu; Allen Zhao; Peter Hsieh; Hong Shih; Li Xu; Yan Ye


Archive | 2001

Damascene structure fabricated using a layer of silicon-based photoresist material

Mehul Naik; Tim Weidman; Dian Sugiarto; Allen Zhao


Archive | 1997

Method for high temperature etching of patterned layers using an organic mask stack

Yan Ye; Allen Zhao; Peter Hsieh; Diana Xiaobing Ma


Archive | 2000

Method of pattern etching a low K dielectric layer

Yan Ye; Pavel Ionov; Allen Zhao; Peter Hsieh; Diana Xiaobing Ma; Chun Yan; Jie Yuan


Archive | 2000

Method of etching dielectric layers using a removable hardmask

Yan Ye; Pavel Ionov; Allen Zhao; Peter Hsieh; Diana Ma; Chun Yan; Jie Yuan

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