Amin Abbasi

High Speed Direct Modulation of a Heterogeneously Integrated InP/SOI DFB Laser

An integrated laser source to a silicon photonics circuit is an important requirement for optical interconnects. We present direct modulation of a heterogeneously integrated distributed feedback laser on and coupled to a silicon waveguide. We demonstrate a 28 Gb/s pseudo-random bit sequence non-return-to-zero data transmission over 2 km non-zero dispersion shifted fiber with a 1-dB power penalty. Additionally, we show 40-Gb/s duobinary modulation generated using the bandwidth limitation of the laser for both back-to-back and fiber transmission configurations. Furthermore, we investigate the device performance for the pulse amplitude modulation (PAM-4) at 20 GBd for high-speed short-reach applications.

28 Gb/s direct modulation heterogeneously integrated C-band InP/SOI DFB laser.

We demonstrate direct modulation of a heterogeneously integrated C-band DFB laser on SOI at 28 Gb/s with a 2 dB extinction ratio. This is the highest direct modulation bitrate so far reported for a membrane laser coupled to an SOI waveguide. The laser operates single mode with 6 mW output power at 100 mA bias current. The 3 dB modulation bandwidth is 15 GHz. Transmission experiments using a 2 km non zero dispersion shifted single mode fiber were performed at 28 Gb/s bitrate using a 2(7)-1 NRZ-PRBS pattern resulting in a 1 dB power penalty.

Demonstration of a discretely tunable III-V-on-silicon sampled grating DFB laser

We demonstrate discrete wavelength tuning with a heterogeneously integrated III-V-on-silicon sampled grating distributed feedback laser. With only two injection currents, the laser is tunable over a wavelength range larger than 55 nm in wavelength steps of 5 nm. A maximum waveguide-coupled output power of 15 dBm is obtained as well as a high side mode suppression of more than 33 dB for all wavelength channels.

Silicon photonics fiber-to-the-home transceiver array based on transfer-printing-based integration of III-V photodetectors

A 4-channel silicon photonics transceiver array for Point-to-Point (P2P) fiber-to-the-home (FTTH) optical networks at the central office (CO) side is demonstrated. A III-V O-band photodetector array was integrated onto the silicon photonic transmitter through transfer printing technology, showing a polarization-independent responsivity of 0.39 - 0.49 A/W in the O-band. The integrated PDs (30 × 40 μm2 mesa) have a 3 dB bandwidth of 11.5 GHz at -3 V bias. Together with high-speed C-band silicon ring modulators whose bandwidth is up to 15 GHz, operation of the transceiver array at 10 Gbit/s is demonstrated. The use of transfer printing for the integration of the III-V photodetectors allows for an efficient use of III-V material and enables the scalable integration of III-V devices on silicon photonics wafers, thereby reducing their cost.

28 Gb/s direct modulation heterogeneously integrated InP/Si DFB laser

We report for the first time the 28 Gb/s direct modulation of heterogeneously integrated III-V-on_Silicon DFB laser. Transmission experiments using 1km of standard single mode fiber were also performed and gave a 4.3 dB penalty at a bitrate of 25 Gb/s.

16 Gbps RoF link at 20 ghz carrier frequency using a silicon photonics transmitter and receiver

In future radio access networks, radio-over-fiber links will be a key enabling technology. A link which is cost-effective in both deployment and operation will be of paramount importance to the development of such networks. Using silicon photonics for the transmitter and receiver is a cost-effective and high-performance solution. In this work we present a link which can transport up to 16 Gbps 16-QAM data on a 20 GHz carrier over 5 km of SMF. The transmitter is a III-V-on-Si directly modulated laser and the receiver is a Ge-on-Si photodetector on a silicon photonic integrated circuit, co-integrated with a SiGe BiCMOS TIA. This is to the best of our knowledge the first Si PIC based RoF link with a directly modulated laser.

56 Gb/s direct modulation of an InP-on-Si DFB laser diode

We demonstrate 56 Gb/s direct modulation of a high bandwidth heterogeneously integrated InP/Si DFB laser, and transmission over 2 km of non-zero dispersion shifted single mode fiber. The high bandwidth of the laser is achieved by exploiting the photon-photon resonance effect.

PAM-4 and Duobinary direct modulation of a hybrid InP/SOI DFB laser for 40 Gb/s transmission over 2 km single mode fiber

We demonstrate 40 Gb/s PAM-4 and Duobinary direct modulation of a heterogeneously integrated InP on SOI DFB laser. Transmission measurement was performed using a 2 km NZ-DSF with a PRBS 215 and 1.5 Vpp swing voltage.

High speed modulation of InP membrane DFB laser diodes

Heterogeneously integrated DFB lasers, consisting of thin InP membranes coupled to low loss Si wire waveguides possess several advantages compared to traditional all-InP DFB lasers. The thin membranes give a large optical confinement factor and their small surface area results in relatively small parasitic capacitances. Both properties make these lasers very well suited for high speed direct modulation. The low loss silicon wire waveguides furthermore lend themselves very well for the implementation of low loss external cavities. Coupling membrane DFB lasers to such an external cavity allows exploiting photon-photon resonances in the modulation response. In this paper we report on the high speed modulation results of our heterogeneously integrated DFB laser diodes. Below we mainly focus on results for on-off-keying, but at the conference we will also present eye diagrams and BER curves for duobinary and PAM-4 modulation formats. We also discuss link experiments done with the lasers and some ideas for further improvement. The excellent large signal modulation and transmission results and the potential to integrate them into WDM modules make the laser diodes particularly suited as transmitters for longer distance optical interconnects inside or between data centers.

Heterogeneously integrated DFB and DBR membrane lasers for high speed direct modulation

We discuss how heterogeneously integrated membrane laser diodes can be designed to give very high direct modulation bandwidths. Their membrane structure allows high optical confinement as well as low parasitic capacitance. Moreover, one can make use of the very low loss of SOI waveguides and of very efficient tapers to couple the membrane lasers to well-defined, low-loss external cavities and one can thus exploit the external cavity resonance in the modulation response.