Jochem Verbist

High Speed Direct Modulation of a Heterogeneously Integrated InP/SOI DFB Laser

An integrated laser source to a silicon photonics circuit is an important requirement for optical interconnects. We present direct modulation of a heterogeneously integrated distributed feedback laser on and coupled to a silicon waveguide. We demonstrate a 28 Gb/s pseudo-random bit sequence non-return-to-zero data transmission over 2 km non-zero dispersion shifted fiber with a 1-dB power penalty. Additionally, we show 40-Gb/s duobinary modulation generated using the bandwidth limitation of the laser for both back-to-back and fiber transmission configurations. Furthermore, we investigate the device performance for the pulse amplitude modulation (PAM-4) at 20 GBd for high-speed short-reach applications.

28 Gb/s direct modulation heterogeneously integrated C-band InP/SOI DFB laser.

We demonstrate direct modulation of a heterogeneously integrated C-band DFB laser on SOI at 28 Gb/s with a 2 dB extinction ratio. This is the highest direct modulation bitrate so far reported for a membrane laser coupled to an SOI waveguide. The laser operates single mode with 6 mW output power at 100 mA bias current. The 3 dB modulation bandwidth is 15 GHz. Transmission experiments using a 2 km non zero dispersion shifted single mode fiber were performed at 28 Gb/s bitrate using a 2(7)-1 NRZ-PRBS pattern resulting in a 1 dB power penalty.

5 x 20 Gb/s heterogeneously integrated III-V on silicon electro-absorption modulator array with arrayed waveguide grating multiplexer

We present a five-channel wavelength division multiplexed modulator module that heterogeneously integrates a 200 GHz channel-spacing silicon arrayed-waveguide grating multiplexer and a 20 Gbps electro-absorption modulator array, showing the potential for 100 Gbps transmission capacity on a 1.5x0.5 mm² footprint.

Compact Low-Power-Consumption 28-Gbaud QPSK/16-QAM Integrated Silicon Photonic/Electronic Coherent Receiver

We demonstrate the codesign and cointegration of an ultracompact silicon photonic receiver and a low-power-consumption (155 mW/channel) two-channel linear transimpedance amplifier array. Operation below the forward error coding (FEC) threshold both for quadrature phase-shift keying (QPSK) and 16-quadrature amplitude modulation (QAM) at 28 Gbaud is demonstrated.

An asymmetric high serial rate TDM-PON with single carrier 25 Gb/s upstream and 50 Gb/s downstream

We report a 2:1 rate asymmetric high serial rate time division multiplexing passive optical network (TDM-PON) with single carrier 25 Gb/s upstream and 50 Gb/s downstream. In the upstream, we present a first 25 Gb/s three-level modulated burstmode receiver employing a 1/4-rate linear burst-mode avalanch photodiode transimpedance amplifier and a custom decoder IC. We successfully demonstrated burst-mode sensitivity of -20.4 dBm with 18 dB dynamic burst-to-burst for 25 Gb/s upstream links. In another direction, a downstream in upper O-band is proposed and demonstrated with three-level duo-binary modulation at 50 Gb/s in real time. The upstream and downstream transmission experiments show that the proposed asymmetric 50 G/25 G high serial rate TDM-PON can support ≥32 users while covering more than 20 km reach.

A 40-GBd QPSK/16-QAM integrated silicon coherent receiver

Through co-design of a dual SiGe transimpedance amplifier and an integrated silicon photonic circuit, we realized for the first time an ultra-compact and low-power silicon single-polarization coherent receiver operating at 40 GBd. A bit-error rate of <;3.8 × 10-3 was obtained for an optical signal-to-noise ratio of 14 dB for QPSK modulation (80 Gb/s), and 26.5 dB for 16-QAM (160 Gb/s). We also demonstrate robust performance of the receiver over temperature and wavelength.

25-Gb/s 1310-nm Optical Receiver Based on a Sub-5-V Waveguide-Coupled Germanium Avalanche Photodiode

We demonstrate low-voltage waveguide-coupled germanium avalanche photodetectors (APDs) with a (wafer-scale mean) gain×bandwidth product of 140 GHz at -5 V by utilizing a 185-nm-thick Ge layer. An optical receiver based on such an APD operating up to 25 Gb/s is demonstrated.

28 Gb/s direct modulation heterogeneously integrated InP/Si DFB laser

We report for the first time the 28 Gb/s direct modulation of heterogeneously integrated III-V-on_Silicon DFB laser. Transmission experiments using 1km of standard single mode fiber were also performed and gave a 4.3 dB penalty at a bitrate of 25 Gb/s.

A DC-coupled 50 Gb/s 0.064 pJ/bit thin-oxide level shifter in 28 nm FDSOI CMOS

High-speed optical interconnects require compact, low-power driver electronics for optical modulators. Inverter based CMOS driver circuits show very low power consumption. However, the output swing is typically limited to the supply voltage which is typically insufficient for optical modulators, requiring a cascoded output driver and level shifter. In this work, we present a new DC-coupled thin-oxide level shifter topology in a 28 nm FDSOI CMOS technology enabling data rates up to 50 Gb/s with a power efficiency of 0.064 pJ/bit.

Real-time 100 Gb/s NRZ-OOK transmission with a silicon photonics GeSi electro-absorption modulator

We demonstrate single-wavelength, serial and real-time 100 Gb/s NRZ-OOK transmission over 500 m SSMF with a GeSi EAM implemented on a silicon photonics platform. The device was driven with 2 Vpp without 50 Ω termination, allowing a low-complexity solution for 400 GbE short-reach optical interconnects.