Anass Benayad

Nitridation-driven conductive Li4Ti5O12 for lithium ion batteries.

To modify oxide structure and introduce a thin conductive film on Li4Ti5O12, thermal nitridation was adopted for the first time. NH3 decomposes surface Li4Ti5O12 to conductive TiN at high temperature, and surprisingly, it also modifies the surface structure in a way to accommodate the single phase Li insertion and extraction. The electrochemically induced Li4+deltaTi5O12 with a TiN coating layer shows great electrochemical properties at high current densities.

Fermi Level Engineering of Single-Walled Carbon Nanotubes by AuCl3 Doping

We investigated the modulation of optical properties of single-walled carbon nanotubes (SWCNTs) by AuCl 3 doping. The van Hove singularity transitions (E 11 (S), E 22 (S), E 11 (M)) in absorption spectroscopy disappeared gradually with an increasing doping concentration and a new peak appeared at a high doping concentration. The work function was downshifted up to 0.42 eV by a strong charge transfer from the SWCNTs to AuCl 3 by a high level of p-doping. We propose that this large work function shift forces the Fermi level of the SWCNTs to be located deep in the valence band, i.e., highly degenerate, creating empty van Hove singularity states, and hence the work function shift invokes a new asymmetric transition in the absorption spectroscopy from a deeper level to newly generated empty states.

Synthesis of chemically bonded graphene/carbon nanotube composites and their application in large volumetric capacitance supercapacitors.

Chemically bonded graphene/carbon nanotube composites as flexible supercapacitor electrode materials are synthesized by amide bonding. Carbon nanotubes attached along the edges and onto the surface of graphene act as spacers to increase the electrolyte-accessible surface area. Our lamellar structure electrodes demonstrate the largest volumetric capacitance (165 F cm(-3) ) ever shown by carbon-based electrodes.

Effects of metal electrodes on the resistive memory switching property of NiO thin films

The effects of various metal electrodes on the resistive switching of NiO thin films were investigated. Contrary to the belief that Pt is used for its high work function, which enables Ohmic contact to p-type NiO, resistive switching was observed in films with Ta or Al electrodes with a low work function in the as-deposited state. The resistive switching of films with a Ag or Cu top electrode with a low work function and high free energy of oxidation shows the importance of the formation of an oxide layer at the metal/NiO interface.

Tailoring Electronic Structures of Carbon Nanotubes by Solvent with Electron-Donating and -Withdrawing Groups

Various electron-donating and -withdrawing groups in aromatic and aliphatic backbones of solvent have been introduced to tailor the electronic structures of single-walled carbon nanotubes (SWCNTs). In the case of solvent with a withdrawing group, electrons were extracted mainly from metallic SWCNTs, whereas small charge transfer was also observed in semiconducting SWCNTs. On the other hand, in the case of solvent with a donating group, electrons were donated to both metallic and semiconducting SWCNTs. This effect was less prominent in solvent with an aliphatic backbone than that with an aromatic backbone. The strong correlation between the sheet resistance and electronic structures of nanotubes is further discussed in conjunction with a modulation of Schottky barrier height.

Doping and de-doping of carbon nanotube transparent conducting films by dispersant and chemical treatment

Single-walled carbon nanotubes (SWCNTs) dispersed with Nafion in a solvent mixture containing de-ionized water and 1-propanol (bisolvent) were sprayed on a poly(ethylene terephthalate) substrate to fabricate flexible transparent conducting films (TCFs). Different SWCNT-to-Nafion ratios were used to optimize the film performance of transparence and sheet resistance. The TCFs were then immersed in nitric acid. These steps resulted in p-type doping due to the presence of Nafion in the SWCNT network and de-doping (removal of doping effect) by the acid treatment. X-Ray photoelectron and Raman spectroscopy confirmed that the de-doping effect occurred with the partial removal of Nafion from the nanotube surface by the nitric acid treatment, which improved the film conductivity by a factor of ∼4 with negligible change in transmittance.

Transfer‐Free Growth of Few‐Layer Graphene by Self‐Assembled Monolayers

Graphene is an ideal 2D planar structure with an electron mobility that reaches 200 000 cm 2 V − 1 s − 1 , an ideal theoretical sheet resistance of 30 Ω sq − 1 , and an excellent transmittance of 97.5% per layer. [ 1–3 ] Recent development of large area graphene synthesis on a metal layer by chemical vapor deposition opened the possibility for a wide range of applications. [ 4–8 ] Although a Ni metal layer provided an effi cient way of producing graphene, controlling the number of layers has not been realized and the graphene layers are not uniform. [ 4–6 ] Cu foil has been used to produce monolayer graphene by the self-limiting growth but controlling the number of graphene layers has never been accessible. [ 8 ] However, controlling the number of graphene layers with high uniformity is a prerequisite for numerous applications. For instance, the bandgap is opened in bilayer graphene, which is useful for transistors. [ 9 ] Furthermore, these growth methods on a metal layer involve an inevitable transfer step of large area graphene that creates defects, impurities, wrinkles, and cracks and has been a bottleneck for science and technology innovation. [ 10 ]

Highly Uniform Switching of Tantalum Embedded Amorphous Oxide Using Self-Compliance Bipolar Resistive Switching

A new approach of self-compliance bipolar switching of tantalum embedded amorphous oxide for highly reliable and uniform switching was investigated. Based on analytic results, the formation of a metallic tantalum embedded amorphous oxide film was confirmed. Robust characteristics of over cycles with no change at both resistance states under voltage pulses were achieved due to the self-compliance function, which originated from the limitation of current by metallic ohmic load resistance. In addition, an oxygen plasma pulse method for interface oxidation was demonstrated.

Nanocrystalline ZnON; high mobility and low band gap semiconductor material for high performance switch transistor and image sensor application.

Interest in oxide semiconductors stems from benefits, primarily their ease of process, relatively high mobility (0.3–10 cm2/vs), and wide-bandgap. However, for practical future electronic devices, the channel mobility should be further increased over 50 cm2/vs and wide-bandgap is not suitable for photo/image sensor applications. The incorporation of nitrogen into ZnO semiconductor can be tailored to increase channel mobility, enhance the optical absorption for whole visible light and form uniform micro-structure, satisfying the desirable attributes essential for high performance transistor and visible light photo-sensors on large area platform. Here, we present electronic, optical and microstructural properties of ZnON, a composite of Zn3N2 and ZnO. Well-optimized ZnON material presents high mobility exceeding 100 cm2V−1s−1, the band-gap of 1.3 eV and nanocrystalline structure with multiphase. We found that mobility, microstructure, electronic structure, band-gap and trap properties of ZnON are varied with nitrogen concentration in ZnO. Accordingly, the performance of ZnON-based device can be adjustable to meet the requisite of both switch device and image-sensor potentials. These results demonstrate how device and material attributes of ZnON can be optimized for new device strategies in display technology and we expect the ZnON will be applicable to a wide range of imaging/display devices.

Selective Oxidation on Metallic Carbon Nanotubes by Halogen Oxoanions

Chlorine oxoanions with the chlorine atom at different oxidation states were introduced in an attempt to systematically tailor the electronic structures of single-walled carbon nanotubes (SWCNTs). The degree of selective oxidation was controlled systematically by the different oxidation state of the chlorine oxoanion. Selective suppression of the metallic SWCNTs with a minimal effect on the semiconducting SWCNTs was observed at a high oxidation state. The adsorption behavior and charge transfer at a low oxidation state were in contrast to that observed at a high oxidation state. Density functional calculations demonstrated the chemisorption of chloro oxoanions at the low oxidation state and their physisorption at high oxidation states. These results concurred with the experimental observations from X-ray photoelectron spectroscopy. The sheet resistance of the SWCNT film decreased significantly at high oxidation states, which was explained in terms of a p-doping phenomenon that is controlled by the oxidation state.