Andrea Tomasi

22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector

Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide-bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p-type amorphous silicon with molybdenum oxide films. In this article, we evidence that annealing above 130 °C—often needed for the curing of printed metal contacts—detrimentally impacts hole collection of such devices. We circumvent this issue by using electrodeposited copper front metallization and demonstrate a silicon heterojunction solar cell with molybdenum oxide hole collector, featuring a fill factor value higher than 80% and certified energy conversion efficiency of 22.5%.

Back-Contacted Silicon Heterojunction Solar Cells With Efficiency >21%

We report on the fabrication of back-contacted silicon heterojunction solar cells with conversion efficiencies above 21%. Our process technology relies solely on simple and size-scalable patterning methods, with no high-temperature steps. Using in situ shadow masks, doped hydrogenated amorphous silicon layers are patterned into two interdigitated combs. Transparent conductive oxide and metal layers, forming the back electrodes, are patterned by hot melt inkjet printing. With this process, we obtain high short-circuit current densities close to 40 mA/cm2 and open-circuit voltages exceeding 720 mV, leading to a conversion efficiency of 21.5%. However, moderate fill factor values limit our current device efficiencies. Unhindered carrier transport through both heterocontact layer stacks, as well as higher passivation quality over the minority carrier-injection range relevant for solar cell operation, are identified as key factors for improved fill factor values and device performance.

Silicon Heterojunction Solar Cells With Copper-Plated Grid Electrodes: Status and Comparison With Silver Thick-Film Techniques

Copper electroplating is investigated and compared with common silver printing techniques for the front metallization of silicon heterojunction solar cells. We achieve smaller feature sizes by electroplating, significantly reducing optical shadowing losses and improving cell efficiency by 0.4% absolute. A detailed investigation of series resistance contributions reveals that, at maximum power point, a significant part of the lateral charge-carrier transport occurs inside the crystalline bulk, rather than exclusively in the front transparent conductive oxide. This impacts optimization for the front-grid design. Using advanced electron microscopy, we study the inner structure of copper-plated fingers and their interfaces. Finally, a cell efficiency of 22.4% is demonstrated with copper-plated front metallization.

Nanocrystalline Silicon Carrier Collectors for Silicon Heterojunction Solar Cells and Impact on Low-Temperature Device Characteristics

Silicon heterojunction solar cells typically use stacks of hydrogenated intrinsic/doped amorphous silicon layers as carrier selective contacts. However, the use of these layers may cause parasitic optical absorption losses and moderate fill factor (FF) values due to a high contact resistivity. In this study, we show that the replacement of doped amorphous silicon with nanocrystalline silicon is beneficial for device performance. Optically, we observe an improved short-circuit current density when these layers are applied to the front side of the device. Electrically, we observe a lower contact resistivity, as well as higher FF. Importantly, our cell parameter analysis, performed in a temperature range from -100 to +80 °C, reveals that the use of hole-collecting p-type nanocrystalline layer suppresses the carrier transport barrier, maintaining FF s in the range of 70% at -100 °C, whereas it drops to 40% for standard amorphous doped layers. The same analysis also reveals a saturation onset of the open-circuit voltage at -100 °C using doped nanocrystalline layers, compared with saturation onset at -60 °C for doped amorphous layers. These findings hint at a reduced importance of the parasitic Schottky barrier at the interface between the transparent electrodes and the selective contact in the case of nanocrystalline layer implementation.

Transparent Electrodes in Silicon Heterojunction Solar Cells: Influence on Contact Passivation

Charge carrier collection in silicon heterojunction solar cells occurs via intrinsic/doped hydrogenated amorphous silicon layer stacks deposited on the crystalline silicon wafer surfaces. Usually, both the electron and hole collecting stacks are externally capped by an n-type transparent conductive oxide, which is primarily needed for carrier extraction. Earlier, it has been demonstrated that the mere presence of such oxides can affect the carrier recombination in the crystalline silicon absorber. Here, we present a detailed investigation of the impact of this phenomenon on both the electron and hole collecting sides, including its consequences for the operating voltages of silicon heterojunction solar cells. Based on our findings, we define guiding principles for improved passivating contact design for high-efficiency silicon solar cells.

The impact of silicon solar cell architecture and cell interconnection on energy yield in hot & sunny climates

Extensive knowledge of the dependence of solar cell and module performance on temperature and irradiance is essential for their optimal application in the field. Here we study such dependencies in the most common high-efficiency silicon solar cell architectures, including so-called Aluminum back-surface-field (BSF), passivated emitter and rear cell (PERC), passivated emitter rear totally diffused (PERT), and silicon heterojunction (SHJ) solar cells. We compare measured temperature coefficients (TC) of the different electrical parameters with values collected from commercial module data sheets. While similar TC values of the open-circuit voltage and the short circuit current density are obtained for cells and modules of a given technology, we systematically find that the TC under maximum power-point (MPP) conditions is lower in the modules. We attribute this discrepancy to additional series resistance in the modules from solar cell interconnections. This detrimental effect can be reduced by using a cell design that exhibits a high characteristic load resistance (defined by its voltage-over-current ratio at MPP), such as the SHJ architecture. We calculate the energy yield for moderate and hot climate conditions for each cell architecture, taking into account ohmic cell-to-module losses caused by cell interconnections. Our calculations allow us to conclude that maximizing energy production in hot and sunny environments requires not only a high open-circuit voltage, but also a minimal series-to-load-resistance ratio.

Profilometry of thin films on rough substrates by Raman spectroscopy.

Thin, light-absorbing films attenuate the Raman signal of underlying substrates. In this article, we exploit this phenomenon to develop a contactless thickness profiling method for thin films deposited on rough substrates. We demonstrate this technique by probing profiles of thin amorphous silicon stripes deposited on rough crystalline silicon surfaces, which is a structure exploited in high-efficiency silicon heterojunction solar cells. Our spatially-resolved Raman measurements enable the thickness mapping of amorphous silicon over the whole active area of test solar cells with very high precision; the thickness detection limit is well below 1 nm and the spatial resolution is down to 500 nm, limited only by the optical resolution. We also discuss the wider applicability of this technique for the characterization of thin layers prepared on Raman/photoluminescence-active substrates, as well as its use for single-layer counting in multilayer 2D materials such as graphene, MoS2 and WS2.

Photolithography-free interdigitated back-contacted silicon heterojunction solar cells with efficiency >21%

We report on the development of interdigitated back-contacted silicon heterojunction solar cells with conversion efficiencies well above 21%. Doped hydrogenated amorphous silicon layers, needed for electron and hole collection, are patterned via in-situ shadow masking whereas transparent conductive oxide and metal layers, of the back electrodes, are defined via hot melt inkjet printing of an etch resist and subsequent wet etching. Our technology is therefore photolithography-free and avoids any high-temperature step. The best fabricated solar cell presents a high short-circuit current density of 39.9 mA/cm2, an open-circuit voltage of 724 mV and a fill factor of 74.5% resulting in a conversion efficiency of 21.5%, with a strong upside potential. We report also on a silver-free IBC-SHJ solar cell with conversion efficiency >20%.

Impact of organic overlayers on a-Si:H/c-Si surface potential

Bilayers of intrinsic and doped hydrogenated amorphous silicon, deposited on crystalline silicon (c-Si) surfaces, simultaneously provide contact passivation and carrier collection in silicon heterojunction solar cells. Recently, we have shown that the presence of overlaying transparent conductive oxides can significantly affect the c-Si surface potential induced by these amorphous silicon stacks. Specifically, deposition on the hole-collecting bilayers can result in an undesired weakening of contact passivation, thereby lowering the achievable fill factor in a finished device. We test here a variety of organic semiconductors of different doping levels, overlaying hydrogenated amorphous silicon layers and silicon-based hole collectors, to mitigate this effect. We find that these materials enhance the c-Si surface potential, leading to increased implied fill factors. This opens opportunities for improved device performance.

Transparent electrodes in silicon heterojunction solar cells: Influence on carrier recombination

Hole and electron collectors in silicon heterojunction solar cells consist of hydrogenated amorphous silicon layer stacks deposited on the crystalline silicon wafer surfaces. Charge carrier extraction from these layers is achieved by electrodes consisting of a transparent conductive oxide and a metal layer. Earlier, the mere presence of the transparent conductive oxide layer on top of the hole collecting stack was shown to alter minority carrier lifetimes, at low minority injection levels, of the crystalline silicon absorber. In this work, we present a detailed investigation of the magnitude and nature of these effects and discuss their impact on silicon heterojunction solar cell performance for the different device architectures.