Andrew E. Hollowell

Micro-fabricated stylus ion trap

An electroformed, three-dimensional stylus Paul trap was designed to confine a single atomic ion for use as a sensor to probe the electric-field noise of proximate surfaces. The trap was microfabricated with the UV-LIGA technique to reduce the distance of the ion from the surface of interest. We detail the fabrication process used to produce a 150 μm tall stylus trap with feature sizes of 40 μm. We confined single, laser-cooled, (25)Mg(+) ions with lifetimes greater than 2 h above the stylus trap in an ultra-high-vacuum environment. After cooling a motional mode of the ion at 4 MHz close to its ground state ( = 0.34 ± 0.07), the heating rate of the trap was measured with Raman sideband spectroscopy to be 387 ± 15 quanta/s at an ion height of 62 μm above the stylus electrodes.

Intrinsic localized modes in two-dimensional vibrations of crystalline pillars and their application for sensing

We present a complete analysis on the possibility of exciting and observing the intrinsic localized modes (ILMs) in a crystalline linear array of nano pillars. We discuss the nano-fabrication techniques for these arrays and visualization procedures to observe the real-time dynamics. As a consequence, we extend previous models to the study of two dimensional vibrations to be consistent with these restrictions. For these pillars, the elastic properties and hence the dynamics depend on the pillars shape and the orientation of the crystal axes. We show that ILMs do form in the system, but their stability, defect pinning, and reaction to friction strongly depend on the crystals properties, with the optimal dynamics only achieved in a rather small region of the parameter space. We also demonstrate fabrication techniques for these pillars and discuss the applications of these pillar arrays to sensing.

Multilayer metal micromachining for THz waveguide fabrication

Thick multi-layer metal stacking offers the potential for fabrication of rectangular waveguide components, including horn antennas, couplers, and bends, for operation at terahertz frequencies, which are too small to machine traditionally. Air-filled, TE10, rectangular waveguides for 3 THz operation were fabricated using two stacked electroplated gold layers on both planar and non-planar substrates. The initial layer of lithography and electroplating defined 37 micrometer tall waveguide walls in both straight and meandering geometries. The second layer, processed on top of the first, defined 33 micrometer thick waveguide lids. Release holes periodically spaced along the center of the lids improved resist clearing from inside of the electroformed rectangular channels. Processing tests of hollow structures on optically clear, lithium disilicate substrates allowed confirmation of resist removal by backside inspection.

Optimizing galvanic pulse plating parameters to improve indium bump to bump bonding

The plating characteristics of a commercially available indium plating solution are examined and optimized to help meet the increasing performance demands of integrated circuits requiring substantial numbers of electrical interconnections over large areas. Current fabrication techniques rely on evaporation of soft metals, such as indium, into lift-off resist profiles. This becomes increasingly difficult to accomplish as pitches decrease and aspect ratios increase. To minimize pixel dimensions and maximize the number of pixels per unit area, lithography and electrochemical deposition (ECD) of indium has been investigated. Pulse ECD offers the capability of improving large area uniformity ideal for large area device hybridization. Electrochemical experimentation into lithographically patterned molds allow for large areas of bumps to be fabricated for low temperature indium to indium bonds. The galvanic pulse profile, in conjunction with the bath configuration, determines the uniformity of the plated array. This pulse is manipulated to produce optimal properties for hybridizing arrays of aligned and bonded indium bumps. The physical properties of the indium bump arrays are examined using a white light interferometer, a SEM and tensile pull testing. This paper provides details from the electroplating processes as well as conclusions leading to optimized plating conditions.

Wafer-level packaging of aluminum nitride RF MEMS filters

Aluminum nitride (AlN) radio frequency (RF) MEMS filters utilize piezoelectric coupling for high-performance electrical filters with frequency diversity in a small form factor. Furthermore, the compatibility of AlN with CMOS fabrication makes AlN extremely attractive from a commercial standpoint. A technological hurdle has been the ability to package these suspended resonator devices at a wafer level with high yield. In this work, we describe wafer-level packaging (WLP) of AlN MEMS RF filters in an all silicon package with solder balls on nickel vanadium / gold (NiV/Au) bond pads that are subsequently ready for flip chip bonding. For this integration scheme, we utilize a 150 mm device wafer, fabricated in a CMOS foundry, and bond at the wafer level to a cavity silicon wafer, which hermetically encapsulates each device. The cavity wafer is then uniformly plasma etched back using a deep reactive ion etcher resulting in a 100 μm thick hermetic silicon lid encapsulating each die, balled with 250 μm 90/10 Pb/Sn solder balls and finally diced into individually packaged dies. Each die can be frequency-trimmed to an exact frequency by rapid temperature annealing the stress of the metallization layers of each resonator. The resulting technology yields a completely packaged wafer of 900 encapsulated die (14 mm2 by 800 μm thick) with multiple resonators and filters at various frequencies in each package.