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Annekathrin Zeun

GlobalFoundries

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Publication

Featured researches published by Annekathrin Zeun.

Archive | 2010

Enhancing deposition uniformity of a channel semiconductor alloy by an in situ etch process

Carsten Reichel; Thorsten Kammler; Annekathrin Zeun; Stephan Kronholz

Archive | 2010

FORMATION OF A CHANNEL SEMICONDUCTOR ALLOY BY DEPOSITING A HARD MASK FOR THE SELECTIVE EPITAXIAL GROWTH

Stephan Kronholz; Carsten Reichel; Annekathrin Zeun; Thorsten Kammler

Archive | 2010

Erhöhen der Abscheidegleichmäßigkeit für eine Halbleiterlegierung durch einen in-situ-Ätzprozess

Carsten Reichel; Thorsten Kammler; Annekathrin Zeun; Stephan Kronholz

Thin Solid Films | 2012

SiGe channels for VT control of high-k metal gate transistors for 32 nm complementary metal oxide semiconductor technology and beyond

Carsten Reichel; Joerg Schoenekess; Stephan Kronholz; Gunda Beernink; Annekathrin Zeun; Andreas Dietel; Thorsten Kammler

Archive | 2012

ENHANCING INTERFACE CHARACTERISTICS BETWEEN A CHANNEL SEMICONDUCTOR ALLOY AND A GATE DIELECTRIC BY AN OXIDATION PROCESS

Stephan Kronholz; Carsten Reichel; Annekathrin Zeun; Martin Trentzsch

Solid-state Electronics | 2011

Control of topography and morphology for channel SiGe by in-situ HCl etching for future CMOS technologies with high-K metal gate

Carsten Reichel; Stephan Kronholz; Thorsten Kammler; Annekathrin Zeun; Gunda Beernink

Archive | 2012

Semiconductor device with reduced threshold variability having a threshold adjusting semiconductor alloy in the device active region

Carsten Reichel; Thorsten Kammler; Annekathrin Zeun; Stephan Kronholz

Archive | 2011

Verbesserung der Gateflächeneigenschaften zwischen einer Kanalhalbleiterlegierung und einem Gatedielektrikum mittels eines Oxidationsprozesses

Stephan Kronholz; Carsten Reichel; Annekathrin Zeun; Martin Trentzsch

Archive | 2009

Herstellung einer Kanalhalbleiterlegierung durch Abscheiden einer Hartmaske für das selektive epitaktische Aufwachsen Producing a channel semiconductor alloy by depositing a hard mask for selective epitaxial growth

Thorsten Kammler; Stephan Kronholz; Carsten Reichel; Annekathrin Zeun

Archive | 2009

Verfahren zur Herstellung von Gatestrukturen mit verbesserten Grenzflächeneigenschaften zwischen einer Kanalhalbleiterlegierung und einem Gatedielektrikum mittels eines Oxidationsprozesses A process for the manufacture of gate structures having improved interfacial characteristics between a semiconductor alloy channel and a gate dielectric by means of an oxidation process

Stephan Kronholz; Carsten Reichel; Annekathrin Zeun; Martin Trentzsch

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Collaboration

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Carsten Reichel

GlobalFoundries

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Stephan Kronholz

Advanced Micro Devices

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Thorsten Kammler

Advanced Micro Devices

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Stephan Kronholz

Advanced Micro Devices

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Thorsten Kammler

Advanced Micro Devices

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Gunda Beernink

GlobalFoundries

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Martin Trentzsch

Advanced Micro Devices

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Martin Trentzsch

Advanced Micro Devices

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Andreas Dietel

GlobalFoundries

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Joerg Schoenekess

GlobalFoundries

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