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Gunda Beernink

GlobalFoundries

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Dive into the research topics where Gunda Beernink is active.

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Publication

Featured researches published by Gunda Beernink.

Archive | 2009

Transistor device comprising an embedded semiconductor alloy having an asymmetric configuration

Stephan Kronholz; Vassilios Papageorgiou; Gunda Beernink; Jan Hoentschel

Archive | 2011

Transistor with Embedded Strain-Inducing Material and Dummy Gate Electrodes Positioned Adjacent to the Active Region

Stephan Kronholz; Gunda Beernink; Maciej Wiatr

Thin Solid Films | 2012

SiGe channels for VT control of high-k metal gate transistors for 32 nm complementary metal oxide semiconductor technology and beyond

Carsten Reichel; Joerg Schoenekess; Stephan Kronholz; Gunda Beernink; Annekathrin Zeun; Andreas Dietel; Thorsten Kammler

Archive | 2011

Formation of a channel semiconductor alloy by forming a hard mask layer stack and applying a plasma-based mask patterning process

Stephan-Detlef Kronholz; Gunda Beernink; Carsten Reichel

Archive | 2009

ADJUSTING OF STRAIN CAUSED IN A TRANSISTOR CHANNEL BY SEMICONDUCTOR MATERIAL PROVIDED FOR THRESHOLD ADJUSTMENT

Stephan Kronholz; Thorsten Kammler; Gunda Beernink; Carsten Reichel

Archive | 2012

Complementary Transistors Comprising High-K Metal Gate Electrode Structures and Epitaxially Formed Semiconductor Materials in the Drain and Source Areas

Stephan Kronholz; Gunda Beernink; Markus Lenski

Archive | 2012

Sophisticated Gate Electrode Structures Formed by Cap Layer Removal with Reduced Loss of Embedded Strain-Inducing Semiconductor Material

Stephan Kronholz; Gunda Beernink; Markus Lenski; Frank Seliger; Frank Richter

Archive | 2012

Performance enhancement in transistors by providing an embedded strain-inducing semiconductor material on the basis of a seed layer

Peter Javorka; Stephan Kronholz; Gunda Beernink

Archive | 2012

Transistors with embedded strain-inducing material formed in cavities provided by an oxidizing etch process

Stephan-Detlef Kronholz; Rohit Pal; Gunda Beernink

Solid-state Electronics | 2011

Control of topography and morphology for channel SiGe by in-situ HCl etching for future CMOS technologies with high-K metal gate

Carsten Reichel; Stephan Kronholz; Thorsten Kammler; Annekathrin Zeun; Gunda Beernink

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Collaboration

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Stephan Kronholz

Advanced Micro Devices

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Stephan Kronholz

Advanced Micro Devices

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Carsten Reichel

GlobalFoundries

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Vassilios Papageorgiou

Advanced Micro Devices

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Jan Hoentschel

GlobalFoundries

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Maciej Wiatr

GlobalFoundries

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Frank Richter

GlobalFoundries

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Frank Seliger

GlobalFoundries

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Markus Lenski

Advanced Micro Devices

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Markus Lenski

Advanced Micro Devices

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