Antti Säynätjoki

Dispersion engineering of photonic crystal waveguides with ring-shaped holes

The geometry of photonic crystal waveguides with ring-shaped holes is optimized to minimize dispersion in the slow light regime. We found geometries with a nearly constant group index in excess of 20 over a wavelength range of 8 nm. The origin of the low dispersion is related to the widening of the propagating mode close to the lower band gap edge.

Reduced propagation loss in silicon strip and slot waveguides coated by atomic layer deposition

When silicon strip and slot waveguides are coated with a 50 nm amorphous titanium dioxide (TiO2) film, measured losses at a wavelength of 1.55 μm can be as low as (2 ± 1)dB/cm and (7 ± 2)dB/cm, respectively. We use atomic layer deposition (ALD), estimate the effect of ALD growth on the surface roughness, and discuss the effect on the scattering losses. Because the gap between the rails of a slot waveguide narrows by the TiO2 deposition, the effective slot width can be back-end controlled. This is useful for precise adjustment if the slot is to be filled with, e. g., a nonlinear organic material or with a sensitizer for sensors applications.

Atomic layer deposited titanium dioxide and its application in resonant waveguide grating

We demonstrate good optical quality TiO(2) thin films grown by atomic layer deposition at 120 degrees C. The optical properties were studied using spectroscopic ellipsometry and prism coupling methods. The refractive index was 2.27, and the slab waveguide propagation loss was less than 1dB/cm at 1.53microm. A high quality resonant waveguide grating was fabricated using a thin TiO(2) layer on top of a SiO(2) grating.

Low-loss silicon slot waveguides and couplers fabricated with optical lithography and atomic layer deposition

We demonstrate low-loss silicon slot waveguides patterned with 248 nm deep-UV lithography and filled with atomic layer deposited aluminum oxide. Propagation losses less than 5 dB/cm are achieved with the waveguides. The devices are fabricated using low-temperature CMOS compatible processes. We also demonstrate simple, compact and efficient strip-to-slot waveguide couplers. With a coupler as short as 10 µm, coupling loss is less than 0.15 dB. The low-index and low-nonlinearity filling material allows nonlinearities nearly two orders of magnitude smaller than in silicon waveguides. Therefore, these waveguides are a good candidate for linear photonic devices on the silicon platform, and for distortion-free signal transmission channels between different parts of a silicon all-optical chip. The low-nonlinearity slot waveguides and robust couplers also facilitate a 50-fold local change of the waveguide nonlinearity within the chip by a simple mask design.

Investigation of second- and third-harmonic generation in few-layer gallium selenide by multiphoton microscopy

Gallium selenide (GaSe) is a layered semiconductor and a well-known nonlinear optical crystal. The discovery of graphene has created a new vast research field focusing on two-dimensional materials. We report on the nonlinear optical properties of few-layer GaSe using multiphoton microscopy. Both second- and third-harmonic generation from few-layer GaSe flakes were observed. Unexpectedly, even the peak at the wavelength of 390u2009nm, corresponding to the fourth-harmonic generation or the sum frequency generation from third-harmonic generation and pump light, was detected during the spectral measurements in thin GaSe flakes.

Low-Loss Titanium Dioxide Strip Waveguides Fabricated by Atomic Layer Deposition

We introduce low-loss amorphous titanium dioxide (TiO2) strip waveguides with sub-wavelength dimensions. The waveguides were fabricated by the combination of atomic layer deposition (ALD), electron beam lithography (EBL), and reactive ion etching (RIE). Propagation losses of the strip waveguides were found to be as low as 5.0 dB/cm at 1.55 μm wavelength. Those propagation losses are mostly due to the sidewall roughness of the waveguides that is caused by the lithography process. The propagation losses were further reduced by deposition, on the fabricated strip waveguides, of an additional layer of TiO2 made by using ALD. A supplementary layer of TiO2 with a thickness of 30 nm reduced the measured propagation losses from 5.0 ± 0.5 dB/cm to 2.4 ± 0.2 dB/cm at 1.55 μm wavelength. It is due to the fact that, after the redeposition process, the initial waveguide sidewall, i.e., the TiO 2/air interface, is virtually removed and the new sidewall has a reduced roughness.

Rapid large-area multiphoton microscopy for characterization of graphene

Single- and few-layer graphene was studied with simultaneous third-harmonic and multiphoton-absorption-excited fluorescence microscopy using a compact 1.55 μm mode-locked fiber laser source. Strong third-harmonic generation (THG) and multiphoton-absorption-excited fluorescence (MAEF) signals were observed with high contrast over the signal from the substrate. High contrast was also achieved between single- and bilayer graphene. The measurement is straightforward and very fast compared to typical Raman mapping, which is the conventional method for characterization of graphene. Multiphoton microscopy is also proved to be an extremely efficient method for detecting certain structural features in few-layer graphene. The accuracy and speed of multiphoton microscopy make it a very promising characterization technique for fundamental research as well as large-scale fabrication of graphene. To our knowledge, this is the first time simultaneous THG and MAEF microscopy has been utilized in the characterization of graphene. This is also the first THG microscopy study on graphene using the excitation wavelength of 1.55 μm, which is significant in telecommunications and signal processing.

Angled sidewalls in silicon slot waveguides: conformal filling and mode properties

Effect of angled sidewalls on the filling and properties of silicon slot waveguides is discussed. We demonstrate complete filling of slot waveguide structures with oxide material systems using the atomic layer deposition technique and discuss use of various slot filling materials. Properties of the optical modes in angled-sidewall slot waveguides are studied. Enhanced vertical confinement is obtained with certain waveguide parameters. The reduced effective mode area enhances e.g. nonlinear effects in the waveguide. We discuss the use of atomic layer deposition in realization of filled slot waveguides optimized for all-optical functionalities.

Enhancement of the third-order optical nonlinearity in ZnO/Al2O3 nanolaminates fabricated by atomic layer deposition

We investigate the third-order optical nonlinearity in ZnO/Al2O3 nanolaminates fabricated by atomic layer deposition and show that the third-order optical nonlinearity can be enhanced by nanoscale engineering of the thin film structure. The grain size of the polycrystalline ZnO film is controlled by varying the thickness of the ZnO layers in the nanolaminate in which thin (∼2u2009nm) amorphous Al2O3 layers work as stopping layers for ZnO crystal growth. Nanoscale engineering enables us to achieve a third harmonic generated signal enhancement of ∼13 times from the optimized nanolaminate structure compared to a ZnO reference film of comparable thickness.

Ag nanoparticles embedded in glass by two-step ion exchange and their SERS application

Silver nanoparticles embedded in glass are prepared by a two-step ion exchange process, where silver ions are introduced into glass in silver ion exchange, and reduced into metallic silver in subsequent potassium ion exchange. The formation of the particles can be explained by the combination effect of the galvanic replacement reaction and the electrolytic deposition. The formed particles are characterized by optical absorption measurements, transmission electron microscopy and atomic force microscopy. Their application in SERS is demonstrated, and the optimal surface features in terms of SERS enhancement are also discussed.