Apu Sivadas

A fully integrated 2×2 b/g and 1×2 a-band MIMO WLAN SoC in 45nm CMOS for multi-radio IC

A significant increase in Smartphones and tablets with embedded Wi-Fi demands a low-cost system solution. In this paper the RF core of an 802.11n 2×2 b/g band, 2×1 a-band MIMO WLAN SoC with die area of 3.83mm2 in 45nm CMOS is described. As shown in Fig. 19.1.1 the SoC has integrated Power Amplifier (PA) for both bands and T/R switch in b/g band, eliminating the need for an expensive external Front-End Module. The LO is synthesized by a two-step DLL-PLL architecture to meet the stringent phase-noise requirements.

A 45nm CMOS near-field communication radio with 0.15A/m RX sensitivity and 4mA current consumption in card emulation mode

Near Field Communication (NFC) is an emerging technology that is penetrating the mobile phone market rapidly. Compliance to multiple NFC standards [1-3] requires designs to support wide dynamic range of field (0.15 to 12A/m), multiple data rates (1.65 to 848Kb/s), various modulation transition times (0.01 to 8usec), wide range of modulation indices (8 to 100%) and line coding techniques (Manchester, NRZ, Modified Miller and PPM). Also, support for small antenna size and very low power card emulation (tag) operation results in additional design constraints. The solution described here integrates all the NFC functions on a multi-IP connectivity SOC in 45nm CMOS.