Barbara Stawarz-Graczyk

The low frequency noise behaviour of SiC MESFETs

In the paper results of low frequency noise measurements of SiC MESFET transistors were presented. The investigations were carried out on MESFET type CRF24010 (CREE). The low frequency noise of drain current and of gate current was measured in two-channel system, separately but in the same time. The spectra of a drain current noise and of a gate current noise were evaluated, also a coefficient of coherence between these noise sources. The noise of gate current was measured in the one-channel system. The noise model of MESFET for CRF24010 transistors for low frequency was elaborated.

Low Frequency Noise Measurement of Reverse Polarized Silicon Carbide Schottky Diodes

The results of 1/f noise measurements results of reverse polarized silicon carbide Schottky diodes are presented. Devices show significant dispersion in both, static and noise data. Some of the devices show also RTS noise.

Identification of inherent noise components of semiconductor devices on an example of optocouplers

In the paper, a method of estimation of parameters of Gaussian and non-Gaussian components in the noise signal of semiconductor devices in a frequency domain is proposed. The method is based on composing estimators of two spectra, corresponding to 1/fα noise (Gaussian component) and two-level RTS noise (non-Gaussian component). The proposed method can be applied for precise evaluation of the corner RTS frequency fRTS in the noise spectrum.

The Methods for RTS Noise Identification

In the paper authors present two methods, which allows to identify the RTS noise in noise signal of semiconductor devices. The first one was elaborated to identify the RTS noise and also to estimate the number of its levels. The second one can be used to estimate all of the parameters of Gaussian and non‐Gaussian components in the noise signal in a frequency domain.