Jacek Cichosz

A New Method for RTS Noise of Semiconductor Devices Identification

In this paper, a new method, called the noise scattering pattern method (NSP method), for random telegraph signal noise identification in the inherent noise of semiconductor devices is described. A block diagram of a noise measurement system based on the NSP method is presented. Examples of patterns of the NSP method are included.

RTS Noise in Optoelectronic Coupled Devices

The low frequency noise of optoelectronic coupled devices (OCDs) was measured in the system designed and constructed by the authors. The RTS noise was observed in some devices. The analysis of RTS noise in time and frequency domains is presented. The values of fRTS were found from spectrum and from observed RTS noise on the base of tup and tdown evaluation. The results of evaluations were compared. The dependencies of tup, tdown and fRTS on values of Id were described.

Noise Scattering Patterns Method for Recognition of RTS Noise in Semiconductor Components

A new method for visualization of RTS noise is described. The method is useful in quick selection of semiconductor components for further RTS noise examination. The results of median filtering of RTS noise are also presented.

Analysis of noise properties of an optocoupler device

In the paper, localization of a source of random telegraph signal noise (RTS noise) in optocoupler devices of CNY 17 type was defined. The equivalent noise circuit in low frequency noise for these types of optocouplers was proposed.

The low frequency noise behaviour of SiC MESFETs

In the paper results of low frequency noise measurements of SiC MESFET transistors were presented. The investigations were carried out on MESFET type CRF24010 (CREE). The low frequency noise of drain current and of gate current was measured in two-channel system, separately but in the same time. The spectra of a drain current noise and of a gate current noise were evaluated, also a coefficient of coherence between these noise sources. The noise of gate current was measured in the one-channel system. The noise model of MESFET for CRF24010 transistors for low frequency was elaborated.

Noise of optoelectronic coupled devices

The three systems for low frequency noise measurements of an optoelectronic coupled device (an infrared emitting diode and a phototransistor) were described. In the system I a low frequency noise of an infrared diode was measured, in the system II a low frequency noise of a phototransistor was measured, in the system III a low frequency noise of an optoelectronic coupled device was measured. The investigations were carried out for optoelectronic coupled devices of CNY type. The results of noise measurements in three systems are compared and a main source of noise in optoelectronic coupled devices was evaluated.

Observation of random telegraph signal in reverse polarized Silicon Carbide Schottky diodes

In the paper authors present results of random telegraph signal (RTS) phenomena observation in reverse polarized Schottky diodes. Devices being studied are commercially available SiC Schottky diodes with reverse voltage UR = 600 V.

The Low Frequency Noise of SiC MESFETs

In the paper results of low frequency noise measurements were presented. The investigations were carried out on SiC MESFET transistors type CRF24010. The system for low frequency noise measurements was constructed, equivalent noise circuit for MESFET was elaborated. From the results of noise measurement it was found that the dominant noise is the flicker noise of the drain current.

Method of noise figure measurement with elimination of losses of input matching circuit

The main sources of instrumentation errors (inaccuracy of source admittance setting, inherent noise of measuring system, losses of input matching circuit) occurring at the noise figure measurement have been analyzed. They have great influence on the accuracy of estimation of noise parameter set of linear twoports. Selected results obtained by means of the elaborated system for the noise figure measurement are presented. The system was applied for the measurement of noise properties of two‐gates MOSFETs at the frequency f=200 MHz.

Piece‐Wise Constant Approximation Method of Identification of RTS Noise

A number of methods of extracting RTS impulses are still developed. A new piece‐wise constant approximation method is presented.