Alicja Konczakowska
Gdańsk University of Technology
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Publication
Featured researches published by Alicja Konczakowska.
IEEE Transactions on Instrumentation and Measurement | 2008
Alicja Konczakowska; Jacek Cichosz; Arkadiusz Szewczyk
In this paper, a new method, called the noise scattering pattern method (NSP method), for random telegraph signal noise identification in the inherent noise of semiconductor devices is described. A block diagram of a noise measurement system based on the NSP method is presented. Examples of patterns of the NSP method are included.
international conference on noise and fluctuations | 2005
Alicja Konczakowska; Jacek Cichosz; Barbara Stawarz
The low frequency noise of optoelectronic coupled devices (OCDs) was measured in the system designed and constructed by the authors. The RTS noise was observed in some devices. The analysis of RTS noise in time and frequency domains is presented. The values of fRTS were found from spectrum and from observed RTS noise on the base of tup and tdown evaluation. The results of evaluations were compared. The dependencies of tup, tdown and fRTS on values of Id were described.
Opto-electronics Review | 2007
Alicja Konczakowska; Jacek Cichosz; Arkadiusz Szewczyk; Barbara Stawarz
In the paper, localization of a source of random telegraph signal noise (RTS noise) in optocoupler devices of CNY 17 type was defined. The equivalent noise circuit in low frequency noise for these types of optocouplers was proposed.
Microelectronics Reliability | 2009
Lech Hasse; Alicja Konczakowska; Janusz Smulko
The research was aimed on defining a factor of quality for high-voltage varistors using Non-Destructive Testing (NDT) techniques, which could be applied during the production testing. The newly proposed parameter Q determined on the basis of the lowest resonant frequency fr measured within the preselected frequency range was taken into account. The parameter Q was defined for ZnO structures after firing, without metallized contacts. The results of investigations allow to conclude that the parameter Q can be used as the quality factor for high-voltage varistors classification into groups of differentiated quality.
Microelectronics Reliability | 2008
Alicja Konczakowska
It was proposed to classify semiconductor devices into groups of differentiated quality on the basis of their low-frequency noise. The methodology of semiconductor device classification taking into account results of noise investigations of two biased samples was presented.
international conference on noise and fluctuations | 2011
Alicja Konczakowska; Jacek Cichosz; Dariusz Dokupil; Paweł Flisikowski; Arkadiusz Szewczyk; Barbara Stawarz-Graczyk
In the paper results of low frequency noise measurements of SiC MESFET transistors were presented. The investigations were carried out on MESFET type CRF24010 (CREE). The low frequency noise of drain current and of gate current was measured in two-channel system, separately but in the same time. The spectra of a drain current noise and of a gate current noise were evaluated, also a coefficient of coherence between these noise sources. The noise of gate current was measured in the one-channel system. The noise model of MESFET for CRF24010 transistors for low frequency was elaborated.
Second International Symposium on Fluctuations and Noise | 2004
Alicja Konczakowska; Jacek Cichosz; Stanisław Galla; Barbara Stawarz
The three systems for low frequency noise measurements of an optoelectronic coupled device (an infrared emitting diode and a phototransistor) were described. In the system I a low frequency noise of an infrared diode was measured, in the system II a low frequency noise of a phototransistor was measured, in the system III a low frequency noise of an optoelectronic coupled device was measured. The investigations were carried out for optoelectronic coupled devices of CNY type. The results of noise measurements in three systems are compared and a main source of noise in optoelectronic coupled devices was evaluated.
Opto-electronics Review | 2009
Barbara Stawarz-Graczyk; Arkadiusz Szewczyk; Alicja Konczakowska
In the paper, a method of estimation of parameters of Gaussian and non-Gaussian components in the noise signal of semiconductor devices in a frequency domain is proposed. The method is based on composing estimators of two spectra, corresponding to 1/fα noise (Gaussian component) and two-level RTS noise (non-Gaussian component). The proposed method can be applied for precise evaluation of the corner RTS frequency fRTS in the noise spectrum.
NOISE AND FLUCTUATIONS: 20th International Conference on Noise and Fluctuations#N#(ICNF‐2009) | 2009
Jacek Cichosz; Alicja Konczakowska
In the paper results of low frequency noise measurements were presented. The investigations were carried out on SiC MESFET transistors type CRF24010. The system for low frequency noise measurements was constructed, equivalent noise circuit for MESFET was elaborated. From the results of noise measurement it was found that the dominant noise is the flicker noise of the drain current.
NOISE AND FLUCTUATIONS: 20th International Conference on Noise and Fluctuations#N#(ICNF‐2009) | 2009
Alicja Konczakowska; Barbara Stawarz-Graczyk
In the paper authors present two methods, which allows to identify the RTS noise in noise signal of semiconductor devices. The first one was elaborated to identify the RTS noise and also to estimate the number of its levels. The second one can be used to estimate all of the parameters of Gaussian and non‐Gaussian components in the noise signal in a frequency domain.