Arkadiusz Szewczyk

A New Method for RTS Noise of Semiconductor Devices Identification

In this paper, a new method, called the noise scattering pattern method (NSP method), for random telegraph signal noise identification in the inherent noise of semiconductor devices is described. A block diagram of a noise measurement system based on the NSP method is presented. Examples of patterns of the NSP method are included.

Analysis of noise properties of an optocoupler device

In the paper, localization of a source of random telegraph signal noise (RTS noise) in optocoupler devices of CNY 17 type was defined. The equivalent noise circuit in low frequency noise for these types of optocouplers was proposed.

The low frequency noise behaviour of SiC MESFETs

In the paper results of low frequency noise measurements of SiC MESFET transistors were presented. The investigations were carried out on MESFET type CRF24010 (CREE). The low frequency noise of drain current and of gate current was measured in two-channel system, separately but in the same time. The spectra of a drain current noise and of a gate current noise were evaluated, also a coefficient of coherence between these noise sources. The noise of gate current was measured in the one-channel system. The noise model of MESFET for CRF24010 transistors for low frequency was elaborated.

Low Frequency Noise Measurement of Reverse Polarized Silicon Carbide Schottky Diodes

The results of 1/f noise measurements results of reverse polarized silicon carbide Schottky diodes are presented. Devices show significant dispersion in both, static and noise data. Some of the devices show also RTS noise.

Measurements of flicker noise in supercapacitor cells

Flicker noise (1/f-like noise) is often used to assess the quality of various materials and devices. This phenomenon has been observed in different electrochemical devices or reactions (e.g., smart windows, pitting corrosion events). In our exploratory studies we consider how to measure and utilize 1/f noise for the quality assessment of supercapacitors. This task requires special attention because of enormous capacitance of the specimen under test and long-time noise measurements. Such system requires stability and noise measurements within a frequency range up to a few mHz only. The developed measurement setup and the considered methods of low frequency noise analysis are presented. Some conclusions for further development of the proposed idea are considered as well. We have confirmed that the 1/f noise can be measured and additionally its level increases after aging the tested cells.

Observation of random telegraph signal in reverse polarized Silicon Carbide Schottky diodes

In the paper authors present results of random telegraph signal (RTS) phenomena observation in reverse polarized Schottky diodes. Devices being studied are commercially available SiC Schottky diodes with reverse voltage UR = 600 V.

Identification of inherent noise components of semiconductor devices on an example of optocouplers

In the paper, a method of estimation of parameters of Gaussian and non-Gaussian components in the noise signal of semiconductor devices in a frequency domain is proposed. The method is based on composing estimators of two spectra, corresponding to 1/fα noise (Gaussian component) and two-level RTS noise (non-Gaussian component). The proposed method can be applied for precise evaluation of the corner RTS frequency fRTS in the noise spectrum.

A Method Of Two‐Terminal Excess Noise Measurement With A Reduction Of Measurement System And Contact Noise

The method and the system for excess noise measurement of electrical two‐terminal components with the significant reduction of the system and contact noise influence is presented. The proposed method can be applied for noise measurements either on devices with terminals or on the wafer level, where as a reference noise the noise of resistive structure fabricated directly on the wafer in the vicinity of the tested component can be used.