Bruce L. Morton

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IEEE Electron Device Letters | 1993

Yeong-Seuk Kim; Yoshio Okada; Ko-Min Chang; Philip J. Tobin; Bruce L. Morton; Henry Choe; Mickey Bowers; Clinton C. K. Kuo; David W. Chrudimsky; Sergio A. Ajuria; John R. Yeargain

The superior characteristics of floating-gate electron tunneling MOS (FETMOS) EEPROMs fabricated using a furnace N/sub 2/O oxynitridation process are described. These devices exhibited about eight times better endurance and good data retention characteristics while maintaining defect density comparable to that of the control thermal oxide devices. These devices also showed very good thickness uniformity across the wafer and wafer-to-wafer.<<ETX>>

international symposium on vlsi technology systems and applications | 1993

Clinton C. K. Kuo; Bruce L. Morton; Thomas R. Toms; Mark S. Weidner; Dave Chrudimsky; Henry Choe; Mickey Bowers; Yeon-seuk Kim; Ko-Min Chang; Philp Smith

Development of new submicron non-volatile memory modules, including an EEPROM with unique programmable redundancy and a block erasable flash EEPROM, for 16-bit and 32-bit devices is reported. Optional process modules required for the non-volatile memories are developed for integration into the baseline logic process based on 0.65 mu double metal CMOS technology.<<ETX>>

Archive | 1985