Byoung-Ho Kwon
Samsung
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Publication
Featured researches published by Byoung-Ho Kwon.
symposium on vlsi technology | 2008
June-mo Koo; Tae-eung Yoon; Tae-Hee Lee; Sung-jae Byun; Young-Gu Jin; Won-joo Kim; Suk-pil Kim; Jong-Bong Park; Jun-Seok Cho; Jeong-Dong Choe; Choong-ho Lee; Jong Jin Lee; Je-Woo Han; Y. M. Kang; Sangjun Park; Byoung-Ho Kwon; Yong-Ju Jung; Inkyoung Yoo; Yoon-dong Park
Multi-bit vertical structure NAND (VsNAND) flash memories with 32-paired FinFET cell string have been successfully integrated for the first time. Its array integration issues regarding the sub-10 nm vertical structure fin could be solved by proper choices of isolation material, ion implantation, and word line patterning. VsNAND flash array cells with TANOS (TaN/Al2O3/SiN/SiOx/Si) charge trap structure show possibilities of acceptable program/erase properties and cell Vth distribution characteristics for multi-level NAND flash application.
Archive | 2006
Byoung-Ho Kwon; Se-rah Yun; Chang-ki Hong; Bo-Un Yoon; Jae-Kwang Choi; Joon-Sang Park
Archive | 2008
Byoung-Ho Kwon; Sang-youn Jo; Jin-Sook Choi; Chang-ki Hong; Bo-Un Yoon; Hong-Soo Kim; Se-rah Yun
Archive | 2010
Byoung-Ho Kwon; Bo-Un Yoon; Min-Sang Kim
Archive | 2011
Jae-Kwang Choi; Hongjin Kim; Keon-Sik Seo; Sol Han; Kun-tack Lee; Byoung-Ho Kwon
Archive | 2009
Byoung-Ho Kwon; Chang-ki Hong; Bo-Un Yoon; Jun-Yong Kim
Archive | 2011
Byoung-Ho Kwon; Chang-ki Hong; Bo-Un Yoon; Jae-dong Lee; Sang-Jin Kim
Archive | 2013
Sang Won Bae; Yong-Sun Ko; Byoung-Ho Kwon; Bo yun Kim; Hongjin Kim; Sungoh Park; Kun-tack Lee; Hyo-san Lee; Sol Han
Archive | 2011
Byoung-Ho Kwon; Bo-Un Yoon
Archive | 2010
Byoung-Ho Kwon; Bo-Un Yoon
