Chin-Sun Shyu
Industrial Technology Research Institute
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Featured researches published by Chin-Sun Shyu.
electronic components and technology conference | 2005
Uei-Ming Jow; Ying-Jiunn Lai; Ching-Liang Weng; Chang-Sheng Chen; Chin-Sun Shyu
For getting more economy and smaller electronic products, technology of system in package (SiP) could complement the technology of system on a chip (SoC) perfectly. About SiP technology, we chose integral substrate technology to realize embedded passives, and used fine process such as high density interconnection (HDI) technology with a special dielectric material to achieve specific circuit functions. The special material is a high dielectric constant (Hi-DK; DK>40 @ 1GHz) material, which is suitable for Multi-Layer Printed Wiring Board (PWB) lamination process, and it was used to fulfill embedded capacitors. In the past years, we had utilized the technology to design Bluetooth/sup TM/ module, or other RF circuits. Furthermore, this technology is more economy than any other SiP processes, like Low Temperature Co-fired Ceramic (LTCC) substrate or silicon substrate, because it bases on the conventional PCB process. In this paper, we introduce not only the embedded capacitors but also some functional embedded passives in RF front-end circuits design on the Hi-DK organic substrate. Moreover, the RF front-end circuits include some functional passive elements: band pass filter, balun, and antenna, etc. Thus, in high frequency circuits, this kind organic substrate can reduce the module size, and in high-speed digital circuits, it also provides inexpensive decoupling capacitors. In the future, we will use this cost-effective technology to design analog and digital circuits on the same board, and the technology of SiP and SoC can be co-designed.
electronic components and technology conference | 2006
Uei-Ming Jow; Chang-Lin Wei; Ying-Jiunn Lai; Chang-Sheng Chen; Chin-Sun Shyu
As wireless communication devices become smaller and lighter, less space is allowed for the placement of the RF components. Area reduction of circuit design is becoming more and more notable. This paper introduces the design and model for the basic embedded passives, and methods of circuits design with embedded elements for 5 GHz RF front-end module for IEEE 802.11a on PWB lamination process. The developed front-end module includes PA (power amplifier) and SPDT (single pole, double throw) switch. The power amplifier exhibits 25.5 dB of gain, 26 dBm of output P1dB, and output IP3 of 37.6 dBm. The SPDT switch shows 2 dB of insertion loss and 18dB of port return loss. Six layer stacks and three kinds of materials, such as Hi-DK material, low-loss material and commercial organic material were applied in this design. In this substrate, we use special high dielectric constant (DK >60 @ 1MHz) material to design embedded capacitors and use the embedded resistors (1k ohm/per square) for whole SiP module. The simulation and measured results have demonstrated a successful circuits design of RF front-end module for 802.11a WLAN
international microsystems, packaging, assembly and circuits technology conference | 2006
Syun Yu; Chang-Sheng Chen; Chang-Lin Wei; Cheng-hua Tsia; Uei-Ming Jow; Chin-Sun Shyu; Sinn-juh Lay; Min-Lin Lee
In this paper, a novel method to realize wide-band band-pass filter is presented. The filter is constructed by serial and shunt transmission-line sections and fabricated on multilayer PCB substrates. The frequency response is specified with a pass band of 1.8-5.8 GHz, and with less than 3 dB insertion losses and more than 10 dB return losses in the pass band. Good agreement between the measured and simulated results has been observed. In addition, the transformation models of flexible substrates are also studied by using the 3D electromagnetic simulator. It is shown that the deviations of frequency responses are less than 10% of the unfolded case. Thus, the filters structure is suitable for both rigid and flexible substrates
2007 IEEE International Conference on Portable Information Devices | 2007
Chang-Lin Wei; Hung-Yen Liu; Chang-Sheng Chen; Cheng-Hua Tsai; Chin-Sun Shyu; Sinn-juh Lay; Min-Lin Lee
This paper introduces the design and model for the basic embedded passives, and methods of circuits design with embedded elements for IEEE 802.11a on PWB lamination process. The power amplifier exhibits 26.4 dB of gain, 26 dBm of output PldB, and output IP3 of 37.2 dBm. Six layer stacks and three kinds of materials, such as Hi-DK material, low-loss material and commercial organic material were applied in this design. In this substrate, we use special high dielectric constant (DK>60 @ 1MHz) material to design embedded capacitors and use the new embedded resistors (Ik ohm/per square) for whole SiP module. The simulation and measured results have demonstrated a successful circuit design for 802.11a WLAN.
international microsystems, packaging, assembly and circuits technology conference | 2012
Cheng-Hua Tsai; Li-Chi Chang; Chang-Sheng Chen; Syun Yu; Chin-Sun Shyu; Shinn-Juh Lai; Jungle Lee
In recent years, fashion mobile phones and other portable electronic products constantly challenge extreme slim design and then they stimulate a rapid development for SiP (system in package) technology. Traditional SMT (Surface Mount Technology) approaches to design and manufacture modules that are still too large. The SOC may reach the demand of miniaturization, but it is still technically difficult to overcome. SiP technology becomes a major consideration and selection of the miniaturized wireless broadband communication technologies. It has been widely applied on Bluetooth, WiFi, and so on. This paper uses SiP technology to realize 3.5G mobile communications modules in multilayer organic hybrid substrate.
Archive | 2008
Chang-Lin Wei; Cheng-Hua Tsai; Chin-Sun Shyu; Kuo-Chiang Chin; Syun Yu
Archive | 2009
Uei-Ming Jow; Chang-Sheng Chen; Chin-Sun Shyu
Archive | 2008
Wei-Ting Chen; Chang-Sheng Chen; Chin-Sun Shyu; Chang-Lin Wei
Archive | 2005
Uei-Ming Jow; Min-Lin Lee; Shinn-Juh Lay; Chin-Sun Shyu; Chang-Sheng Chen
Archive | 2008
Wei-Ting Chen; Chang-Sheng Chen; Chin-Sun Shyu; Chang-Lin Wei