Christian Isheden

MOSFETs with recessed SiGe Source/Drain junctions formed by selective etching and growth

A source/drain extension process that uses HCl etching followed by selective growth of in situ B-doped SiGe is demonstrated. The two key process steps, etching and growth, are integrated by perform ...

Selective Si Etching Using HCl Vapor

Selective Si etching using HCl in a reduced pressure chemical vapor deposition reactor in the temperature range 800-1000 degrees C is investigated. At 900 degrees C, the etch process is anisotropic ...

Formation of shallow junctions by HCl-based Si etch followed by selective epitaxy of B-doped Si1-xGex in RPCVD

Formation of shallow source/drain junctions by using HCl-based Si etch followed by selective deposition of in situ heavily B-doped SiGe in a reduced pressure chemical vapor deposition reactor is pr ...

Formation of Ni mono-germanosilicide on heavily B-doped epitaxial SiGe for ultra-shallow source/drain contacts

The formation of Ni germanosilicides during solid-state interaction between Ni and heavily B-doped strained epitaxial Si1-xGex films with x=0.18, 0.32 and 0.37 is studied. No NiSi2 is found in thes ...

Formation of shallow source/drain junctions in MOSFET structures by using Cl-based processes in reduced pressure CVD reactors

A novel process to form shallow junctions for source/drain application in CMOS structures is presented. The method consists of two steps; first an HCl-etch followed by SiCl2H2-based selective epitaxy in the same run in a reduced pressure chemical vapour deposition chamber. Optimization of etch and epitaxy processes have been investigated and the active dopant concentration in SiGe layers grown was measured directly in the device openings.

Recessed and Epitaxially Regrown SiGe(B) Source/Drain Junctions with Ni salicide contacts

Integration issues concerning recessed epitaxial SiGe(B) source/drain junctions formed by selective Si etching followed by selective epitaxial growth of in situ heavily B-doped Si1-xGex are present ...