Christopher Boguslaw Kocon

NexFET a new power device

A new generation of Power MOSFET technology has been introduced. The devices are manufactured in a standard 0.35µm CMOS production line with only few process modules being adapted for the requirements of vertical power transistors with a 2x improvement in Figure of Merit (FOM). This improvement results mainly from the reduction in Miller capacitance.

NexFET generation 2, new way to power

In this paper, an integrated NexFET power module is presented to meet requirements on next-generation, high efficiency and high current density DC-DC converters for computer applications. The new power module uses an innovative stacked-die package technology, implements low Vth power MOSFET in the low-side position, and introduces monolithically integrated components to avoid shoot-through and minimize voltage ringing at the switch node. In synchronous buck application, this power module achieves over 90% efficiency and low switch node ringing at high output current rating (25A) and high operation frequency (1MHz) under 12V input and 1.3V output condition.