Chun-Hsiung Lin

Low interface trap density Al2O3/In0.53Ga0.47As MOS capacitor fabricated on MOCVD-grown InGaAs epitaxial layer on Si substrate

A low interface trap density (Dit) Al2O3/In0.53Ga0.47As/Si MOS capacitor fabricated on an In0.53Ga0.47As heterostructure layer directly grown on a 300 mm on-axis Si(100) substrate by MOCVD with a very thin buffer layer is demonstrated. Compared with the MOS capacitors fabricated on the In0.53Ga0.47As layer grown on the lattice-matched InP substrate, the Al2O3/In0.53Ga0.47As MOS capacitors fabricated on the Si substrate exhibit excellent capacitance–voltage characteristics with a small frequency dispersion of approximately 2.5%/decade and a low interface trap density Dit close to 5.5 × 1011 cm−2 eV−1. The results indicate the potential of integrating high-mobility InGaAs-based materials on a 300 mm Si wafer for post-CMOS device application in the future.

In 0.53 Ga 0.47 As MOSFETs with high channel mobility and gate stack quality fabricated on 300 mm Si substrate

In_0.53Ga_0.47As channel MOSFETs were fabricated on 300 mm Si substrate. The epitaxial In_0.53Ga_0.47As channel layer exhibits high Hall electron mobility comparable to those grown on lattice matched InP substrates. Excellent device characteristics (SS~95 mV/dec., I_on/I_off ~10⁵, DIBL ~51 mV/V at V_ds = 0.5V for L_g=150 nm device) with good uniformity across the wafer were demonstrated. The extracted high field effect mobility (μ_EF = 1837 cm²/V-s with EOT ~ 0.9 nm) is among the highest values reported for surface channel In_0.53Ga_0.47As MOSFETs.

Electrical Characteristics of MOSCAPs and the Effect of Postdeposition Annealing Temperatures

The characteristics of Al2O3/InSb MOSCAPs processed with different postdeposition annealing (PDA) temperatures are investigated. X-ray photoelectron spectroscopy analysis shows a significant reduction of InSb-oxides after HCl plus trimethyl aluminum treatment and oxide deposition. Multifrequency capacitance-voltage (C-V) characteristics exhibit low-frequency and asymmetrical C-V behaviors, in which capacitance in the InSb conduction band side is lower than in the valence band side. The electrical properties of the MOSCAPs are sensitive to PDA temperature and degraded significantly at PDA temperature >300 °C. This degradation is closely related to the diffusion of In, Sb into Al2O3 as indicated by transmission electron microscopy analyses.

High performance In 0.53 Ga 0.47 As FinFETs fabricated on 300 mm Si substrate

In_0.53Ga_0.47As FinFETs are fabricated on 300 mm Si substrate. High device performance with good uniformity across the wafer are demonstrated (SS=78 mV/dec., I_on/I_off~10⁵, DIBL=48 mV/V, g_m=1510 μS/μm, and I_on=301 μA/μm at V_ds=0.5V with L_g=120 nm device). The extrinsic field effect mobility of 1731 cm²/V-s with EOT~0.9nm is extracted by split-CV. Devices fabricated on 300mm Si have shown similar performances in SS and I_on when benchmarked with device fabricated on lattice-matched InP substrate. In addition, an I_on of 44.1 μA per fin is observed on the fin-height of 70 nm and the fin-width of 25nm, which is among the highest values reported for In_0.53Ga_0.47As FinFETs to the best of our knowledge.

Electrical Characteristics of

The characteristics of Al2O3/InSb MOSCAPs processed with different postdeposition annealing (PDA) temperatures are investigated. X-ray photoelectron spectroscopy analysis shows a significant reduction of InSb-oxides after HCl plus trimethyl aluminum treatment and oxide deposition. Multifrequency capacitance-voltage (C-V) characteristics exhibit low-frequency and asymmetrical C-V behaviors, in which capacitance in the InSb conduction band side is lower than in the valence band side. The electrical properties of the MOSCAPs are sensitive to PDA temperature and degraded significantly at PDA temperature >300 °C. This degradation is closely related to the diffusion of In, Sb into Al2O3 as indicated by transmission electron microscopy analyses.