Hung-Ta Lin

Low interface trap density Al2O3/In0.53Ga0.47As MOS capacitor fabricated on MOCVD-grown InGaAs epitaxial layer on Si substrate

A low interface trap density (Dit) Al2O3/In0.53Ga0.47As/Si MOS capacitor fabricated on an In0.53Ga0.47As heterostructure layer directly grown on a 300 mm on-axis Si(100) substrate by MOCVD with a very thin buffer layer is demonstrated. Compared with the MOS capacitors fabricated on the In0.53Ga0.47As layer grown on the lattice-matched InP substrate, the Al2O3/In0.53Ga0.47As MOS capacitors fabricated on the Si substrate exhibit excellent capacitance–voltage characteristics with a small frequency dispersion of approximately 2.5%/decade and a low interface trap density Dit close to 5.5 × 1011 cm−2 eV−1. The results indicate the potential of integrating high-mobility InGaAs-based materials on a 300 mm Si wafer for post-CMOS device application in the future.

In 0.53 Ga 0.47 As MOSFETs with high channel mobility and gate stack quality fabricated on 300 mm Si substrate

In_0.53Ga_0.47As channel MOSFETs were fabricated on 300 mm Si substrate. The epitaxial In_0.53Ga_0.47As channel layer exhibits high Hall electron mobility comparable to those grown on lattice matched InP substrates. Excellent device characteristics (SS~95 mV/dec., I_on/I_off ~10⁵, DIBL ~51 mV/V at V_ds = 0.5V for L_g=150 nm device) with good uniformity across the wafer were demonstrated. The extracted high field effect mobility (μ_EF = 1837 cm²/V-s with EOT ~ 0.9 nm) is among the highest values reported for surface channel In_0.53Ga_0.47As MOSFETs.