Syun-Ming Jang

Shallow trench isolation (STI) method employing gap filling silicon oxide dielectric layer

Shallow trench isolation method

Self-aligned polish stop layer hard masking method for forming planarized aperture fill layers

Method of photo alignment for shallow trench isolation chemical-mechanical polishing

Shallow trench isolation method employing self-aligned and planarized trench fill dielectric layer

Method of fabricating a readable alignment mark structure using enhanced chemical mechanical polishing

Self-aligned sacrificial oxide for shallow trench isolation

Gap-filling of O3-TEOS for shallow trench isolation

Trench filling method employing oxygen densified gap filling silicon oxide layer formed with low ozone concentration

Reduction of surface defects on amorphous silicon grown by a low-temperature, high pressure LPCVD process